caa a22 4500 469091320 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920901xx s 000 0 eng 10.1007/BF02665544 doi (NATIONALLICENCE)springer-10.1007/BF02665544 Importance of the choice of the profile model for a p - n junction in the location of deep levels [Elektronische Daten] [J. Jimenez-Tejada, J. Lopez-Villanueva, P. Cartujo, J. Vicente, J. Carceller] The energy levels introduced by Pt in silicon have been measured in a non-abruptp +-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance. Two levels have been detected with activation energies of:E c -E T = 0.22 eV with acceptor character andE T -E v = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor levelE c -E T = 0.34 eV was found instead of or besides a donorlike levelE T -E v = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation of the electrical behavior leads to the non-existence of the acceptor levelE c −E T = 0.34 eV located in then-side of the junction. TMS, 1992 Non-abrupt p +- n junction nationallicence system Si:Pt nationallicence DLTS nationallicence Jimenez-Tejada J. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071, Granada, Spain aut Lopez-Villanueva J. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071, Granada, Spain aut Cartujo P. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071, Granada, Spain aut Vicente J. Departamento de Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011, Valladolid, Spain aut Carceller J. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071, Granada, Spain aut Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 883-886 0361-5235 21:9<883 1992 21 11664 https://doi.org/10.1007/BF02665544 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665544 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jimenez-Tejada J. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071, Granada, Spain aut NATIONALLICENCE 700 1- Lopez-Villanueva J. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071, Granada, Spain aut NATIONALLICENCE 700 1- Cartujo P. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071, Granada, Spain aut NATIONALLICENCE 700 1- Vicente J. Departamento de Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011, Valladolid, Spain aut NATIONALLICENCE 700 1- Carceller J. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071, Granada, Spain aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 883-886 0361-5235 21:9<883 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer