caa a22 4500 469091347 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920901xx s 000 0 eng 10.1007/BF02665543 doi (NATIONALLICENCE)springer-10.1007/BF02665543 Electrical characterisation of Cu-Diffused n-GaAs epitaxial layers using optical deep level transient spectroscopy [Elektronische Daten] [A. Venter, F. Auret, C. Ball] Undopedn --GaAs epitaxial layers were grown by OMVPE onn + (1 × 1018 cm3) and semi-insulating (SI) GaAs substrates. The as-grown epitaxial layers grown onn + substrates contained several deep level defects whereas those grown on SI substrates were, apart from the EL2, virtually "defect free”. Upon Cu diffusion, deep levels which may reduce hole and electron diffusion lengths and lifetimes, were formed. Optical deep level transient spectrocopy (ODLTS) has been used to identify such levels atE v + 0,41 eV andE c-0,31 eV respectively. The EO1 (EL2) trap concentration reduced after Cu had been diffused into the epitaxial layers. The magnitude of this reduction was approximately equal to the concentration of the trap found atE c - 0,31 eV which suggests that the two may be related. Activation energies and capture cross-section values are presented for the deep levels detected in these epitaxial layers. TMS, 1992 GaAs nationallicence Cu-diffused nationallicence ODLTS nationallicence electrical characterisation nationallicence Venter A. Department of Physics, University of Port Elizabeth, P.O. Box 1600, 6000, Port Elizabeth, Republic of South Africa aut Auret F. Physics Department, University of Pretoria, Republic of South Africa aut Ball C. Department of Physics, University of Port Elizabeth, P.O. Box 1600, 6000, Port Elizabeth, Republic of South Africa aut Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 877-882 0361-5235 21:9<877 1992 21 11664 https://doi.org/10.1007/BF02665543 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665543 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Venter A. Department of Physics, University of Port Elizabeth, P.O. Box 1600, 6000, Port Elizabeth, Republic of South Africa aut NATIONALLICENCE 700 1- Auret F. Physics Department, University of Pretoria, Republic of South Africa aut NATIONALLICENCE 700 1- Ball C. Department of Physics, University of Port Elizabeth, P.O. Box 1600, 6000, Port Elizabeth, Republic of South Africa aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 877-882 0361-5235 21:9<877 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer