caa a22 4500 469091355 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920901xx s 000 0 eng 10.1007/BF02665551 doi (NATIONALLICENCE)springer-10.1007/BF02665551 An initial investigation of the microstructure of Ti/Pd/Au ohmic contact structures for gaas microwave devices applications [Elektronische Daten] [Bernard Henry, Anne Staton-Bevan, Vijay Sharma, Mark Crouch, Sukhdev Gill] A preliminary investigation of both as-deposited and annealed titanium (75 nm), palladium (75 nm), gold (400 nm), ohmic contacts to thinp +-GaAs layers, was carried out using a combination of transmission electron microscopy, energy dispersive x-ray analysis, secondary ion mass spectroscopy and electrical measurements. The annealed contacts showed limited interaction between the metallization and the semiconductor with a metal penetration depth of only 2 nm for a 4 minute anneal at 380° C. The contacts were found to remain layered after annealing. The layers consisted of a uniform upper layer of large a Au(Ga) grains, a central, non-uniform layer containing small Pd-rich grains and a lower uniform layer of almost pure Ti. Preliminary SIMS studies suggested Zn dopant outdiffusion from the epilayer into the metal layer and this may have important implications for the electrical properties of these contacts. TMS, 1992 GaAs nationallicence Ti/Pd/Au nationallicence ohmic contacts nationallicence metallization nationallicence Henry Bernard Department of Materials, Imperial College of Science, Technology and Medicine, SW7 2AZ, London, UK aut Staton-Bevan Anne Department of Materials, Imperial College of Science, Technology and Medicine, SW7 2AZ, London, UK aut Sharma Vijay Department of Materials, Imperial College of Science, Technology and Medicine, SW7 2AZ, London, UK aut Crouch Mark Defence Research Agency (Electronics Division), R.S.R.E., Malvern St. Andrews Road, WR14 3PS, Malvern, Worcs., UK aut Gill Sukhdev Defence Research Agency (Electronics Division), R.S.R.E., Malvern St. Andrews Road, WR14 3PS, Malvern, Worcs., UK aut Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 929-933 0361-5235 21:9<929 1992 21 11664 https://doi.org/10.1007/BF02665551 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665551 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Henry Bernard Department of Materials, Imperial College of Science, Technology and Medicine, SW7 2AZ, London, UK aut NATIONALLICENCE 700 1- Staton-Bevan Anne Department of Materials, Imperial College of Science, Technology and Medicine, SW7 2AZ, London, UK aut NATIONALLICENCE 700 1- Sharma Vijay Department of Materials, Imperial College of Science, Technology and Medicine, SW7 2AZ, London, UK aut NATIONALLICENCE 700 1- Crouch Mark Defence Research Agency (Electronics Division), R.S.R.E., Malvern St. Andrews Road, WR14 3PS, Malvern, Worcs., UK aut NATIONALLICENCE 700 1- Gill Sukhdev Defence Research Agency (Electronics Division), R.S.R.E., Malvern St. Andrews Road, WR14 3PS, Malvern, Worcs., UK aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 929-933 0361-5235 21:9<929 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer