caa a22 4500 469091363 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920901xx s 000 0 eng 10.1007/BF02665546 doi (NATIONALLICENCE)springer-10.1007/BF02665546 Properties and use of cycled grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si layers for high-conductance GaAs tunnel junctions [Elektronische Daten] [R. Venkatasubramanian, M. Timmons, T. Colpitts, S. Asher] Heavily doped GaAs layers for high conductance GaAs tunnel junctions have been grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) using Zn as the dopant for thep + regions and either Se or Si as the dopant for then + regions. At a growth temperature of 700° C using a "cycled” growth technique for the Zn-dopedp ++-GaAs layer, both the conductance and the peak current density of the tunnel diode has been increased by a factor of ∼65 compared to a tunnel junction with a continuously grown Zn-doped p+-GaAs. The conductance of the tunnel junction, which is maximized at a growth temperature of 650° C using cycled growth, is comparable to the best reported values for tunnel junctions grown by molecular beam epitaxy. Cycled growths forn + Se-doped regions are found to reduce the conductance of a tunnel junction by more than two orders of magnitude. However, cycled growth for the n+-GaAs regions with Si doping show no conductance degradation. A model based on incorporation sites of these dopants during OMVPE growth of GaAs is presented to account for the experimental observations. TMS, 1992 GaAs tunnel junctions nationallicence OMVPE nationallicence cycled growth nationallicence Venkatasubramanian R. Research Triangle Institute, Research Triangle Park aut Timmons M. Research Triangle Institute, Research Triangle Park aut Colpitts T. Research Triangle Institute, Research Triangle Park aut Asher S. National Renewable Energy Laboratory, 80401, Golden, CO aut Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 893-899 0361-5235 21:9<893 1992 21 11664 https://doi.org/10.1007/BF02665546 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665546 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Venkatasubramanian R. Research Triangle Institute, Research Triangle Park aut NATIONALLICENCE 700 1- Timmons M. Research Triangle Institute, Research Triangle Park aut NATIONALLICENCE 700 1- Colpitts T. Research Triangle Institute, Research Triangle Park aut NATIONALLICENCE 700 1- Asher S. National Renewable Energy Laboratory, 80401, Golden, CO aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 893-899 0361-5235 21:9<893 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer