caa a22 4500 469091371 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920901xx s 000 0 eng 10.1007/BF02665550 doi (NATIONALLICENCE)springer-10.1007/BF02665550 Co, Fe, and Ti Implants in InGaAs and Co Implants in InP at 200° C [Elektronische Daten] [Mulpuri Rao, Sadanand Gulwadi, Savitri Mulpuri, David Simons, Peter Chi, C. Caneau, W-P. Hong, O. Holland, Harry Dietrich] Elevated temperature (200° C) single- and multiple-energy Co implants inn-type InP, Co and Fe implants in n-type In0.53Ga0.47As, and Ti implants inp-type In0.53Ga0.47As were performed. For elevated temperature, single-energy Co and Fe implants, no satellite peaks at various locations like 0.8R P, RP + ΔRP, and 2R P R P is the projected range and ΔR P the straggle of the implant) are observed, in contrast to the case of room temperature implants. However, the outdiffusion of the implant is as severe as that in room temperature implantation for high temperature anneals. Indiffusion of the implant also occurs, but it is not as severe as the outdiffusion. High temperature annealing of Ti-implanted material results in a slight indiffusion of Ti, with minimal redistribution or outdiffusion. For all elevated temperature implants, the lattice quality of the annealed material is close to that of the virgin unimplanted material. For all ion species used in this study, resistivities close to the intrinsic limit are obtained in the implanted and annealed materials. TMS, 1992 InP nationallicence InGaAs nationallicence implantation nationallicence annealing nationallicence Rao Mulpuri Department of Electrical and Computer Engineering, George Mason University, 22030, Fairfax, Virginia aut Gulwadi Sadanand Department of Electrical and Computer Engineering, George Mason University, 22030, Fairfax, Virginia aut Mulpuri Savitri Department of Electrical and Computer Engineering, George Mason University, 22030, Fairfax, Virginia aut Simons David National Institute of Standards and Technology, 20899, Gaithersburg, Maryland aut Chi Peter National Institute of Standards and Technology, 20899, Gaithersburg, Maryland aut Caneau C. Bellcore, Red Bank, 07701-7040, New Jersey aut Hong W-P Bellcore, Red Bank, 07701-7040, New Jersey aut Holland O. Oak Ridge National Laboratory, 37831, Oak Ridge, Tennessee aut Dietrich Harry Naval Research Laboratory, 20375, Washington, DC aut Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 923-928 0361-5235 21:9<923 1992 21 11664 https://doi.org/10.1007/BF02665550 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665550 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rao Mulpuri Department of Electrical and Computer Engineering, George Mason University, 22030, Fairfax, Virginia aut NATIONALLICENCE 700 1- Gulwadi Sadanand Department of Electrical and Computer Engineering, George Mason University, 22030, Fairfax, Virginia aut NATIONALLICENCE 700 1- Mulpuri Savitri Department of Electrical and Computer Engineering, George Mason University, 22030, Fairfax, Virginia aut NATIONALLICENCE 700 1- Simons David National Institute of Standards and Technology, 20899, Gaithersburg, Maryland aut NATIONALLICENCE 700 1- Chi Peter National Institute of Standards and Technology, 20899, Gaithersburg, Maryland aut NATIONALLICENCE 700 1- Caneau C. Bellcore, Red Bank, 07701-7040, New Jersey aut NATIONALLICENCE 700 1- Hong W-P Bellcore, Red Bank, 07701-7040, New Jersey aut NATIONALLICENCE 700 1- Holland O. Oak Ridge National Laboratory, 37831, Oak Ridge, Tennessee aut NATIONALLICENCE 700 1- Dietrich Harry Naval Research Laboratory, 20375, Washington, DC aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 923-928 0361-5235 21:9<923 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer