caa a22 4500 46909138X CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920901xx s 000 0 eng 10.1007/BF02665542 doi (NATIONALLICENCE)springer-10.1007/BF02665542 Elastic and plastic contributions to X-ray Line broadening of InGaAsP/InP Heterostructures [Elektronische Daten] [Jongwon Lee, William Mayo, Thomas Tsakalakos] The coherency state of MOCVD grown InGaAsP/InP double-heterostructure wafers was examined and their effects on the structural properties were determined in this study. Lattice mismatches were measured using {511} asymmetric and (400) symmetric x-ray reflections. The chemical lattice misfit and the elastic strain were also calculated. Misfit dislocations were examined by both x-ray topography and photoluminescence imaging. The x-ray full width at half maximum (FWHM) varied with the degree of mismatch. The largest FWHM was obtained for samples containing the misfit dislocations. It was found that FWHM is influenced not only by the plastic deformation, but also by the elastic strain. To model the dependence of the FWHM, the radius of curvature was measured, and its contribution to the x-ray line broadening was calculated. Also, the contribution from misfit dislocations was taken into account. This model assumes that the dislocations are planar and interact weakly with each other. Good agreement between measured and calculated values was obtained. Thus, it is concluded that the major contribution to x-ray line broadening ofelastically strained sample is the lattice curvature induced by misfit strain, and that the dominant factor affecting x-ray FWHM ofplastically deformed sample is lattice relaxation induced by misfit dislocation. TMS, 1992 InGaAsP/InP nationallicence heterostructures nationallicence x-ray line broadening nationallicence Lee Jongwon Department of Materials Science, Rutgers University, P.O. Box 909, 08855-0909, Piscataway, NJ aut Mayo William Department of Materials Science, Rutgers University, P.O. Box 909, 08855-0909, Piscataway, NJ aut Tsakalakos Thomas Department of Materials Science, Rutgers University, P.O. Box 909, 08855-0909, Piscataway, NJ aut Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 867-875 0361-5235 21:9<867 1992 21 11664 https://doi.org/10.1007/BF02665542 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665542 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee Jongwon Department of Materials Science, Rutgers University, P.O. Box 909, 08855-0909, Piscataway, NJ aut NATIONALLICENCE 700 1- Mayo William Department of Materials Science, Rutgers University, P.O. Box 909, 08855-0909, Piscataway, NJ aut NATIONALLICENCE 700 1- Tsakalakos Thomas Department of Materials Science, Rutgers University, P.O. Box 909, 08855-0909, Piscataway, NJ aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 867-875 0361-5235 21:9<867 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer