caa a22 4500 46909141X CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920901xx s 000 0 eng 10.1007/BF02665548 doi (NATIONALLICENCE)springer-10.1007/BF02665548 An investigation of molecular beam epitaxy "in-situ” grown Ag/GaAs schottky diodes [Elektronische Daten] [Y. Wang, M. Houng, F. Chen, P. Sze, M. Hong, J. Mannaerts] Electrical properties of molecular beam epitaxy "in-situ” grown Ag on (001) GaAs Schottky diodes were investigated. X-ray rocking curves show a (111) main peak for "in-situ” Ag grown at low temperature. During annealing, the main peak of Ag rotates from (111) to (200) to closely match that of the underlying GaAs lattice. The barrier height, 0.991 eV (determined by C-V measurement), decreases whereas doping concentration increases with increasing annealing temperature. Interdiffusion and the formation of some compound phases were also observed during annealing. A simple model, in which Ga dissociates from GaAs resulting in an increase in uncompensated ions at the metal-semiconductor interface, is proposed to explain the observation that carrier concentrations increase after annealing. TMS, 1992 Metal-semiconductor contacts nationallicence epitaxy nationallicence Ag nationallicence Wang Y. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC aut Houng M. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC aut Chen F. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC aut Sze P. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC aut Hong M. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Mannaerts J. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 911-915 0361-5235 21:9<911 1992 21 11664 https://doi.org/10.1007/BF02665548 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665548 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Y. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC aut NATIONALLICENCE 700 1- Houng M. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC aut NATIONALLICENCE 700 1- Chen F. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC aut NATIONALLICENCE 700 1- Sze P. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC aut NATIONALLICENCE 700 1- Hong M. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Mannaerts J. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/9(1992-09-01), 911-915 0361-5235 21:9<911 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer