caa a22 4500 469091428 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655596 doi (NATIONALLICENCE)springer-10.1007/BF02655596 Numerical analysis of silicon-on-lnsulator short channel effects in a radiation environment [Elektronische Daten] [J. Smith, R. Lawrence, G. Campisi] Radiation-induced charge build-up in the buried oxide (BOX) of SOI MOSFETs affects device performance through threshold voltage shifts of the back channel. This charge build-up is related to the electric field in the BOX during irradiation. In this paper, we report on the application of a numerical model for the potential distribution in a semiconductor device to the task of determining the electric field in the BOX. This electric field distribution is then combined with a model for charge accumulation as a function of electric field during irradiation to predict the threshold voltage shifts in the back channel of SOI MOSFET devices as a function of channel length. For the device design analyzed here, this model agrees with available experimental data and predicts an increase in back channel threshold shift as the channel length enters the sub-micron regime. TMS, 1992 SIMOX nationallicence radiation effects nationallicence SOI nationallicence charge defect modeling nationallicence Smith J. Center for Electronic Materials and Processing, Pennsylvania State University, 16802, University Park, PA aut Lawrence R. ARACOR, Washington, DC aut Campisi G. Naval Research Laboratory, Washington, DC aut Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 683-687 0361-5235 21:7<683 1992 21 11664 https://doi.org/10.1007/BF02655596 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655596 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Smith J. Center for Electronic Materials and Processing, Pennsylvania State University, 16802, University Park, PA aut NATIONALLICENCE 700 1- Lawrence R. ARACOR, Washington, DC aut NATIONALLICENCE 700 1- Campisi G. Naval Research Laboratory, Washington, DC aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 683-687 0361-5235 21:7<683 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer