caa a22 4500 469091436 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655603 doi (NATIONALLICENCE)springer-10.1007/BF02655603 Analysis of persistent photoconductivity due to potential barriers [Elektronische Daten] [Jeremiah Lowney, Santos Mayo] Persistent photoconductivity has been seen in thin silicon resistors fabricated with SIMOX material at temperatures between 60 and 220 K. This effect has been attributed to the depletion of carriers near the interface between the top silicon layer and the buried oxide, which is due to the large number of surface traps at this interface. The depletion of carriers is accompanied by a built-in field on the order of 10,000 V/cm, which causes a potential barrier that is nearly a quarter of the energy gap of silicon. The theory of the recombination kinetics of majority carriers with minority carriers trapped at the interface on the other side of a potential barrier is studied. Both the possibilities of tunneling and thermal activation have been considered. The results show that thermal activation dominates at the temperatures of our measurements in SIMOX material, while at lower temperatures tunneling would dominate. TMS, 1992 Interface states nationallicence persistent photoconductivity nationallicence SIMOX nationallicence Lowney Jeremiah Semiconductor Electronics Division, National Institute of Standards and Technology, 20899, Gaithersburg, MD aut Mayo Santos Semiconductor Electronics Division, National Institute of Standards and Technology, 20899, Gaithersburg, MD aut Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 731-736 0361-5235 21:7<731 1992 21 11664 https://doi.org/10.1007/BF02655603 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655603 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lowney Jeremiah Semiconductor Electronics Division, National Institute of Standards and Technology, 20899, Gaithersburg, MD aut NATIONALLICENCE 700 1- Mayo Santos Semiconductor Electronics Division, National Institute of Standards and Technology, 20899, Gaithersburg, MD aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 731-736 0361-5235 21:7<731 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer