caa a22 4500 469091444 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655606 doi (NATIONALLICENCE)springer-10.1007/BF02655606 Wang L. IBM Research Division, T. J. Watson Research Center, 10598, Yorktown Heights, NY aut X-ray lithography induced radiation damage in CMOS and bipolar devices [Elektronische Daten] [L. Wang] Radiation effects from a synchroton x-ray lithography source on the performance degradation and long term reliability of high performance self-aligned bipolar devices and deep sub-micron CMOS devices are studied. The hot-carrier properties of the x-ray induced damage in CMOS devices, such as interface states, positive oxide charges and neutral traps have been examined. The effect of these radiation induced defects and their impact on the DRAM circuits in terms of the performance and reliability are discussed. In the self-aligned, double polysilicon bipolar transistor structure interface states and trapped charges can be generated by the radiation source in the sidewall oxide near the emitter-base junction such damage can increase the emitter-base leakage current. This increase of base current can substantially degrade the device current gain at low bias. TMS, 1992 X-ray lithography nationallicence radiation damage nationallicence bipolar and CMOS device reliability nationallicence Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 753-756 0361-5235 21:7<753 1992 21 11664 https://doi.org/10.1007/BF02655606 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655606 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Wang L. IBM Research Division, T. J. Watson Research Center, 10598, Yorktown Heights, NY aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 753-756 0361-5235 21:7<753 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer