caa a22 4500 469091452 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655607 doi (NATIONALLICENCE)springer-10.1007/BF02655607 Radiation damage effects on bipolar and MOS devices in X-Ray lithography [Elektronische Daten] [L. Hsia, T. Christensen] Radiation damage effects of bipolar and MOS transistors have been investigated using the vacuum ultraviolet (VUV) storage ring of the national synchrotron light source (NSLS). The devices under investigation were exposed to x-ray radiation and electrical measurements were performed to determine the radiation effects on device parameters. It was found for bipolar devices that the current gain is the parameter that is most sensitive to x-ray irradiation. The current gain decreases as the dose increases and the degradation reaches saturation at 1000 mJ/cm2. Upon annealing in forming gas at 400° C for 30 min, the current gain recovered its pre-irradiation value and stress test did not show any reliability problem. Bothn-channel andp-channel MOS devices with polysilicon gates were investigated. Host of the relevant device parameters were measured before and after irradiation and after annealing. Upon irradiation the threshold voltage shows the most obvious shift, which was more negative in both cases. However, thep- channel devices experienced a much larger shift than then-channel ones. The transconductance of the devices also experienced a shift. TMS, 1992 X-ray lithography damage nationallicence synchrotron radiation damage nationallicence MOS and bipolar device radiation damage nationallicence Hsia L. IBM General Technology Division, East Fishkill Facilities, 12533, Hopewell Junction, New York aut Christensen T. IBM General Technology Division, East Fishkill Facilities, 12533, Hopewell Junction, New York aut Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 757-761 0361-5235 21:7<757 1992 21 11664 https://doi.org/10.1007/BF02655607 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655607 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hsia L. IBM General Technology Division, East Fishkill Facilities, 12533, Hopewell Junction, New York aut NATIONALLICENCE 700 1- Christensen T. IBM General Technology Division, East Fishkill Facilities, 12533, Hopewell Junction, New York aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 757-761 0361-5235 21:7<757 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer