caa a22 4500 469091460 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655600 doi (NATIONALLICENCE)springer-10.1007/BF02655600 Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons [Elektronische Daten] [Hisayoshi Itoh, Masahito Yoshikawa, Isamu Nashiyama, Shunji Misawa, Hajime Okumura, Sadafumi Yoshida] Electron spin resonance (ESR) was used to study defects induced by 2MeV-proton irradiation in cubic silicon carbide (3C-SiC) epitaxially grown on Si substrates by chemical vapor deposition. A new ESR signal labeled T5 was observed at temperatures lower than ≈100 K in Al doped, p-type 3C-SiC epilayers irradiated. The T5 signal has anisotropic g-values of g1 = 2.0020 ± 0.0001, g2 = 2.0007 ± 0.0001,and g3 = 1.9951 ± 0.0001. The principal axes of the g-tensor were found to be along the 〈100〉 directions, indicating that the T5 center has D2 symmetry. Isochronal annealing of the irradiated epilayers showed that the T5 center was annealed at temperatures around 150° C. A tentative model is discussed for the T5 center. TMS, 1992 Electron spin resonance nationallicence silicon carbide nationallicence proton irradiation nationallicence defect nationallicence annealing nationallicence Itoh Hisayoshi Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, 370-12, Gunma, Japan aut Yoshikawa Masahito Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, 370-12, Gunma, Japan aut Nashiyama Isamu Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305, Ibaraki, Japan aut Misawa Shunji Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305, Ibaraki, Japan aut Okumura Hajime Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305, Ibaraki, Japan aut Yoshida Sadafumi Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305, Ibaraki, Japan aut Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 707-710 0361-5235 21:7<707 1992 21 11664 https://doi.org/10.1007/BF02655600 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655600 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Itoh Hisayoshi Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, 370-12, Gunma, Japan aut NATIONALLICENCE 700 1- Yoshikawa Masahito Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, 370-12, Gunma, Japan aut NATIONALLICENCE 700 1- Nashiyama Isamu Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305, Ibaraki, Japan aut NATIONALLICENCE 700 1- Misawa Shunji Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305, Ibaraki, Japan aut NATIONALLICENCE 700 1- Okumura Hajime Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305, Ibaraki, Japan aut NATIONALLICENCE 700 1- Yoshida Sadafumi Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305, Ibaraki, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 707-710 0361-5235 21:7<707 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer