caa a22 4500 469091479 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655605 doi (NATIONALLICENCE)springer-10.1007/BF02655605 Recombination-induced random walk diffusion of interstitial carbon in silicon [Elektronische Daten] [A. Frederickson, A. Karakashian] Recombination events at interstitial carbon atoms in silicon cause the carbon to step to adjacent interstitial positions. DLTS inp-type silicon is used to measure the random walk from interstitial carbon to interstitial carbon-oxygen centers. Electron capture at the interstitial carbon defect causes the carbon to step with a frequency of once per 16 capture events. Using 100 keV electron irradiations to produce electron-hole recombination events, we measure: the step frequency, electron capture cross section, and the mean time between electron captures at the interstitial carbon defect. Measurement of athermal diffusion in the dark indicates that the time between recombination events at interstitial carbon is 0.92 × 1011 seconds if the electron density is 1 m−3. Interstitial carbon moves rapidly at low temperature by this random walk in p-type silicon. TMS, 1992 Diffusion nationallicence recombination nationallicence silicon nationallicence interstitial-carbon nationallicence random-walk nationallicence DLTS nationallicence Frederickson A. Space Physics Division, Air Force Phillips Laboratory, 01731, Hanscom AFB, MA aut Karakashian A. Department of Physics and Applied Physics, University of Lowell, 01854, Lowell, MA aut Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 745-752 0361-5235 21:7<745 1992 21 11664 https://doi.org/10.1007/BF02655605 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655605 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Frederickson A. Space Physics Division, Air Force Phillips Laboratory, 01731, Hanscom AFB, MA aut NATIONALLICENCE 700 1- Karakashian A. Department of Physics and Applied Physics, University of Lowell, 01854, Lowell, MA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 745-752 0361-5235 21:7<745 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer