caa a22 4500 469091509 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655608 doi (NATIONALLICENCE)springer-10.1007/BF02655608 Griscom David Naval Research Laboratory, 20375, Washington, DC aut Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence [Elektronische Daten] [David Griscom] A brief review is given of the evidence supporting the "hydrogen model” of interface trap generation in silicon-based MOS structures. Emphasis is placed on the importance of electron spin resonance (ESR) in identifying and quantifying certain crucial defect species, including atomic hydrogen, self-trapped holes, and the interface trap itself — theP b center. Three types of experiments are considered: (1) low-temperature irradiation and isochronal anneals, (2) pulse radiolysis at room temperature, and (3) exposure of previously-irradiated devices to hydrogen gas. These disparate types of data are all reasonably accounted for by a unified model involving the production of H+ and/or H0 species in the oxide which subsequently drift to the interface where they react with hydrogen-passivated dangling bonds to formP b centers. TMS, 1992 Radiation damage in MOS nationallicence radiolytic hydrogen species in oxides nationallicence hydrogen model for interface trap generation nationallicence Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 763-767 0361-5235 21:7<763 1992 21 11664 https://doi.org/10.1007/BF02655608 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655608 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Griscom David Naval Research Laboratory, 20375, Washington, DC aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 763-767 0361-5235 21:7<763 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer