caa a22 4500 469091517 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655599 doi (NATIONALLICENCE)springer-10.1007/BF02655599 Fast neutron radiation damage effects on high resistivity silicon junction detectors [Elektronische Daten] [Zheng Li, H. Kraner] P + −n −n + silicon radiation detectors made of high resistivity Si material (ρ ≥ 2 kΩ-cm) were irradiated to a neutron fluence of a few times of 1013 n/cm2. Dependence of detector leakage current, reverse bias capacitance, and effective doping concentration of the Si substrate on the neutron fluence have been systematically studied. It has been found that the detector leakage current increases linearly with neutron fluence in the range studies, with a damage constant of α = 9 × 10−17 A/cm(ΔI = αΔAϕn @#@), and the C-V characteristics of detectors irradiated to ϕn > 1012 n/cm2 become frequency dependent. Models using several defect levels in the band gap are proposed to describe the frequency dependent C-V effects and the electrical field profile after high neutron fluence irradiation. TMS, 1992 Neutron radiation damage nationallicence radiation detector nationallicence high resistivity silicon nationallicence frequency-dependent capacitance nationallicence donor removal and/or compensation nationallicence type-inversion nationallicence electrical field distribution nationallicence Li Zheng Instrumentation Division, Brookhaven National Laboratory, 535-B Upton, 11973, NY aut Kraner H. Instrumentation Division, Brookhaven National Laboratory, 535-B Upton, 11973, NY aut Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 701-705 0361-5235 21:7<701 1992 21 11664 https://doi.org/10.1007/BF02655599 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655599 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Zheng Instrumentation Division, Brookhaven National Laboratory, 535-B Upton, 11973, NY aut NATIONALLICENCE 700 1- Kraner H. Instrumentation Division, Brookhaven National Laboratory, 535-B Upton, 11973, NY aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 701-705 0361-5235 21:7<701 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer