caa a22 4500 46909155X CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655602 doi (NATIONALLICENCE)springer-10.1007/BF02655602 Nicollian Edward Department of Engineering, University of North Carolina at Charlotte, 28223, Charlotte, North Carolina aut Electrical characterization of defects created in the Si-SiO2 system by ionizing radiation [Elektronische Daten] [Edward Nicollian] This paper reviews some of the electrical characterization methods used to determine electrically active defect densities produced by ionizing radiation exposure of the Si-SiO2 system. The electrical characterization methods discussed are the charge-capacitance method, the conductance method, and the charge pumping method. Interface trap and fixed oxide charge densities are separated by use of the interface trap charge neutral point. The controversy in the literature about the location in silicon bandgap energy of this charge neutral point is addressed, and it is shown that it is located at midgap to a good approximation. The comparative advantages and limitations of the three measurement methods for radiation studies are discussed. TMS, 1992 Insulator defect characterization nationallicence fixed oxide charge nationallicence interface states nationallicence Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 721-729 0361-5235 21:7<721 1992 21 11664 https://doi.org/10.1007/BF02655602 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655602 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Nicollian Edward Department of Engineering, University of North Carolina at Charlotte, 28223, Charlotte, North Carolina aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 721-729 0361-5235 21:7<721 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer