caa a22 4500 469091576 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655595 doi (NATIONALLICENCE)springer-10.1007/BF02655595 Effects of radiative processing steps on inversion layer mobility and channel hot carrier damage in reoxidized nitrided oxide mosfets [Elektronische Daten] [Gregory Dunn, John Krick] The effects of x-ray irradiation and a subsequent low temperature anneal on the properties of reoxidized nitrided oxide (RNO) MOSFET's were examined. Irradiation was found to degrade conventional SiO2 MOSFET lifetime under channel hot carrier stress far more strongly than RNO lifetime, particularly for p-channel devices. This is attributed to reduced bulk neutral electron trap generation in RNO. The inversion layer mobility of RNOn-MOSFET's (and, to a lesser degree,p-MOSFET's) was found toincrease after irradiation and anneal. 1/f noise measurements indicate that this change in mobility is due to a reduction in the density of near-interface electron traps. TMS, 1992 Inversion-layer mobility nationallicence MOSFET nationallicence reoxidized nitrided oxide nationallicence x-ray nationallicence Dunn Gregory Lincoln Laboratory, Massachusetts Institute of Technology, P.O. Box 73, 02173, Lexington, MA aut Krick John The Pennsylvania State University, 16802, University Park, PA aut Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 677-681 0361-5235 21:7<677 1992 21 11664 https://doi.org/10.1007/BF02655595 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655595 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dunn Gregory Lincoln Laboratory, Massachusetts Institute of Technology, P.O. Box 73, 02173, Lexington, MA aut NATIONALLICENCE 700 1- Krick John The Pennsylvania State University, 16802, University Park, PA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 677-681 0361-5235 21:7<677 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer