caa a22 4500 469091584 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655604 doi (NATIONALLICENCE)springer-10.1007/BF02655604 Effects of combined x-ray Irradiation and hot-electron injection on NMOS transistors [Elektronische Daten] [Artur Balasinski, Wenliang Chen, Tso-Ping Ma] Changes of NMOS transistor parameters after combined stress of x-ray irradiation and hot-electron injection were studied. We found that, in general, the resultant effects depended strongly on the order of the stress sequence. Of the parameters studied, oxide charge trapping depends more significantly on the stress sequence than the generation of interface traps. Interface trap transformation process and nonuniform defect distribution along the channel have been observed under certain stress conditions. Consequences of the above effects on the transistor dc parameters are discussed. TMS, 1992 MOS transistors nationallicence radiation effects nationallicence hot-carrier injection nationallicence Balasinski Artur Department of Electrical Engineering, Yale University Center of Microelectronic Materials and Structures, 06520-2157, New Haven, Connecticut aut Chen Wenliang Department of Electrical Engineering, Yale University Center of Microelectronic Materials and Structures, 06520-2157, New Haven, Connecticut aut Ma Tso-Ping Department of Electrical Engineering, Yale University Center of Microelectronic Materials and Structures, 06520-2157, New Haven, Connecticut aut Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 737-743 0361-5235 21:7<737 1992 21 11664 https://doi.org/10.1007/BF02655604 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655604 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Balasinski Artur Department of Electrical Engineering, Yale University Center of Microelectronic Materials and Structures, 06520-2157, New Haven, Connecticut aut NATIONALLICENCE 700 1- Chen Wenliang Department of Electrical Engineering, Yale University Center of Microelectronic Materials and Structures, 06520-2157, New Haven, Connecticut aut NATIONALLICENCE 700 1- Ma Tso-Ping Department of Electrical Engineering, Yale University Center of Microelectronic Materials and Structures, 06520-2157, New Haven, Connecticut aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 737-743 0361-5235 21:7<737 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer