caa a22 4500 469091592 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920701xx s 000 0 eng 10.1007/BF02655601 doi (NATIONALLICENCE)springer-10.1007/BF02655601 Williams C. MCNC, Center for Microelectronics, P.O. Box 12889, 27709-2889, Research Triangle Park, NC aut Kinetics of trapping, detrapping, and trap generation [Elektronische Daten] [C. Williams] The trapping and detrapping of charge in the oxides have been studied for two decades. While there has been a lot of progress in understanding the mechanisms responsible for charge trapping and detrapping in these oxides, it is still not fully understood. For example, even under low field injection conditions first order trapping kinetics do not accurately model the observed data. Under high field injection the situation is exacerbated by the generation of additional trapping sites during the injection process, which is also not completely understood. The paper presents a review of the kinetics of trapping and detrapping and describes various models that have been proposed to explain experimentally observed trapping-detrapping behavior. TMS, 1992 Trapping nationallicence detrapping nationallicence oxide defects nationallicence modeling nationallicence Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 711-720 0361-5235 21:7<711 1992 21 11664 https://doi.org/10.1007/BF02655601 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655601 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Williams C. MCNC, Center for Microelectronics, P.O. Box 12889, 27709-2889, Research Triangle Park, NC aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/7(1992-07-01), 711-720 0361-5235 21:7<711 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer