caa a22 4500 469091606 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19921201xx s 000 0 eng 10.1007/BF02667597 doi (NATIONALLICENCE)springer-10.1007/BF02667597 Photoluminescence spectra of Si1-xGex/Si quantum well structures grown by three different techniques [Elektronische Daten] [Koichi Terashima, Michio Tajima, Nobuyuki Ikarashi, Taeko Niino, Masayuki Hiroi, Toru Tatsumi] Photoluminescence (PL) spectra of Si1-xGex/Si multiple quantum wells have been measured at 4.2 K for the samples grown by three different techniques; conventional molecular beam epitaxy (MBE), gas-source MBE, and ultra high vacuum chemical vapor deposition (UHV-CVD). Only in the case of conventional MBE, strong emission bands appear about 80 meV below the band gap of Si1-xGex. These strong emission bands disappear after the annealing at 800° C. From the dependence of the PL intensity on the excitation power, strong emission is considered to be due to some recombination center. On the other hand, in the case of gas-source MBE and UHV-CVD, the strong emission bands are undetectable, although the band-edge PL lines of Si1-xGex are clearly observed. There is no significant change in the PL spectra after the annealing. The origin of the strong emission band is considered to be defects which are characteristic of conventional MBE. TMS, 1992 Photoluminescence nationallicence silicon-germanium nationallicence quantum well nationallicence molecular beam epitaxy nationallicence ultra high vacuum chemical vapor deposition nationallicence Terashima Koichi Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut Tajima Michio Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut Ikarashi Nobuyuki Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut Niino Taeko Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut Hiroi Masayuki Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut Tatsumi Toru Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1081-1085 0361-5235 21:12<1081 1992 21 11664 https://doi.org/10.1007/BF02667597 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02667597 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Terashima Koichi Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut NATIONALLICENCE 700 1- Tajima Michio Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut NATIONALLICENCE 700 1- Ikarashi Nobuyuki Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut NATIONALLICENCE 700 1- Niino Taeko Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut NATIONALLICENCE 700 1- Hiroi Masayuki Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut NATIONALLICENCE 700 1- Tatsumi Toru Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, 305, Tsukuba, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1081-1085 0361-5235 21:12<1081 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer