caa a22 4500 469091622 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19921201xx s 000 0 eng 10.1007/BF02667601 doi (NATIONALLICENCE)springer-10.1007/BF02667601 Size effect on the electrical conduction and noise of RuO2-based thick film resistors [Elektronische Daten] [Bi-Shiou Chiou, Jer-Yuan Sheu, Wen-Fa Wu] Temperature dependence of sheet resistance for a generic RuO2-based resistor with a composition of 20wt.% RuO2-80wt.% glass (63wt.% PbO-25wt.% B2O3-12wt.% SiO2) is evaluated. A combined tunnel/parallel conduction model is employed to describe the resistance behavior with respect to the temperature variation. The geometry of the resistive film, such as the aspect ratio and thickness, cast a significant effect on the electrical characteristic of the thick film assembly. It is observed that shorter resistive films exhibit smaller resistivity as compared to that of the longer film. Thinner resistive films have smaller resistivity as compared to the thicker ones. In addition,1/f noise is the dominating contribution in the thick film resistor. The presence of1/f noise can be qualitatively explained with the aid of the tunneling mechanism. TMS, 1992 Thick film nationallicence resistor nationallicence noise nationallicence Chiou Bi-Shiou Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan aut Sheu Jer-Yuan Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan aut Wu Wen-Fa Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan aut Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1105-1110 0361-5235 21:12<1105 1992 21 11664 https://doi.org/10.1007/BF02667601 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02667601 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chiou Bi-Shiou Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Sheu Jer-Yuan Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan aut NATIONALLICENCE 700 1- Wu Wen-Fa Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1105-1110 0361-5235 21:12<1105 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer