caa a22 4500 469091630 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19921201xx s 000 0 eng 10.1007/BF02667604 doi (NATIONALLICENCE)springer-10.1007/BF02667604 High gain AllnAs/GaAsSb/AllnAs NpN HBTs on InP [Elektronische Daten] [G. Sullivan, C. Farley, W. Ho, R. Pierson, M. Szwed, M. Lind, R. Bernescut] We report the first growth and characterization of high gain double heterojunction NpN HBTs on InP with a lattice-matched GaAs5Sb5 base layer. This AllnAs/GaAsSb heterojunction has almost no discontinuity in the conduction band edge, eliminating the need to grade the emitter-to-base heterojunction to achieve optimal carrier injection. The layers were grown in a solid source MBE system, using tetramer As4 and Sb4 sources. Be is an efficient acceptor in the GaAsSb, but the mobility is about half that measured inp type GaAs on GaAs substrates. The HBTs fabricated were large area mesa isolated transistors, with a beta of 80 at a current density of 2 kA/cm2, and the gain remained high at lower current densities. The turnon voltage,V be, is only 0.45 V at a current density of 2 A/cm2. TMS, 1992 GaAsSb nationallicence InP nationallicence HBT nationallicence Sullivan G. Rockwell International Science Center, 91358, Thousand Oaks, CA aut Farley C. Rockwell International Science Center, 91358, Thousand Oaks, CA aut Ho W. Rockwell International Science Center, 91358, Thousand Oaks, CA aut Pierson R. Rockwell International Science Center, 91358, Thousand Oaks, CA aut Szwed M. Rockwell International Science Center, 91358, Thousand Oaks, CA aut Lind M. Rockwell International Science Center, 91358, Thousand Oaks, CA aut Bernescut R. Rockwell International Science Center, 91358, Thousand Oaks, CA aut Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1123-1125 0361-5235 21:12<1123 1992 21 11664 https://doi.org/10.1007/BF02667604 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02667604 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sullivan G. Rockwell International Science Center, 91358, Thousand Oaks, CA aut NATIONALLICENCE 700 1- Farley C. Rockwell International Science Center, 91358, Thousand Oaks, CA aut NATIONALLICENCE 700 1- Ho W. Rockwell International Science Center, 91358, Thousand Oaks, CA aut NATIONALLICENCE 700 1- Pierson R. Rockwell International Science Center, 91358, Thousand Oaks, CA aut NATIONALLICENCE 700 1- Szwed M. Rockwell International Science Center, 91358, Thousand Oaks, CA aut NATIONALLICENCE 700 1- Lind M. Rockwell International Science Center, 91358, Thousand Oaks, CA aut NATIONALLICENCE 700 1- Bernescut R. Rockwell International Science Center, 91358, Thousand Oaks, CA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1123-1125 0361-5235 21:12<1123 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer