caa a22 4500 469091649 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19921201xx s 000 0 eng 10.1007/BF02667602 doi (NATIONALLICENCE)springer-10.1007/BF02667602 Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD [Elektronische Daten] [S. Stockman, A. Hanson, S. Lichtenthal, M. Fresina, G. Höfler, K. Hsieh, G. Stillman] Carbon dopedp-type GaAs and In0.53Ga0.47As epitaxial layers have been grown by low-pressure metalorganic chemical vapor deposition using CC14 as the carbon source. Low-temperature post-growth annealing resulted in a significant increase in the hole concentration for both GaAs and In0.53Ga0.47As, especially at high doping levels. The most heavily doped GaAs sample had a hole concentration of 3.6 × 1020 cm−3 after a 5 minute anneal at ≈400° C in N2, while the hole concentration in In0.53Ga0.47As reached 1.6 × 1019 cm−3 after annealing. This annealing behavior is attributed to hydrogen passivation of carbon acceptors. Post-growth cool-down in an AsH3/H2 ambient was found to be the most important factor affecting the degree of passivation for single, uncapped GaAs layers. No evidence of passivation is observed in the base region of InGaP/GaAs HBTs grown at ≈625° C. The effect ofn-type cap layers and cool-down sequence on passivation of C-doped InGaAs grown at ≈525° C shows that hydrogen can come from AsH3, PH3, or H2, and can be incorporated during growth and during the post-growth cool-down. In the case of InP/InGaAs HBTs, significant passivation was found to occur in the C-doped base region. TMS, 1992 Hydrogen passivation nationallicence carbon doping nationallicence metalorganic chemical vapor deposition (MOCVD) nationallicence heterojunction bipolar transistors (HBTs) nationallicence Stockman S. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut Hanson A. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut Lichtenthal S. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut Fresina M. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut Höfler G. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut Hsieh K. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut Stillman G. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1111-1118 0361-5235 21:12<1111 1992 21 11664 https://doi.org/10.1007/BF02667602 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02667602 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Stockman S. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Hanson A. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Lichtenthal S. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Fresina M. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Höfler G. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Hsieh K. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Stillman G. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, 61801, Urbana, Illinois aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1111-1118 0361-5235 21:12<1111 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer