caa a22 4500 469091665 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19921201xx s 000 0 eng 10.1007/BF02667606 doi (NATIONALLICENCE)springer-10.1007/BF02667606 Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers [Elektronische Daten] [F. Kish, . Caracci, N. Holonyak, K. Hsieh, J. Baker, S. Maranowski, A. Sugg, J. Dallesasse, R. Fletcher, C. Kuo, T. Osentowski, M. Craford] Data are presented demonstrating the formation of native oxides from high Al composition In0.5(AlxGa1-x)0.5P (x≳ 0.9) by simple annealing in a "wet” ambient. The oxidation occurs by reaction of the high Al composition crystal with H2O vapor (in a N2 carrier gas) at elevated temperatures (≥500° C) and results in stable transparent oxides. Secondary ion mass spectrometry (SIMS) as well as scanning and transmission electron microscopy (SEM and TEM) are employed to evaluate the oxide properties, composition, and oxide-semiconductor interface. The properties of native oxides of the In0.5(AlxGa1-x)0.5P system are compared to those of the AlxGa1-xAs system. Possible reaction mechanisms and oxidation kinetics are considered. The In0.5(AlxGa1-x)0.5P native oxide is shown to be of sufficient quality to be employed in the fabrication of stripe-geometry In0.5(AlxGa1-x)0.5P visible-spectrum laser diodes. TMS, 1992 In0.5(Alx.Ga1-x)0.5P, AlxGa1-xAs, native oxides nationallicence III-V native oxides nationallicence Albearing III-V oxides nationallicence III-V "wet” oxidation nationallicence oxide-defined heterostructure lasers nationallicence Kish F. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut Caracci Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut Holonyak N. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut Hsieh K. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut Baker J. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut Maranowski S. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut Sugg A. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut Dallesasse J. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut Fletcher R. Optoelectronics Division, Hewlett-Packard Company, 95131, San Jose, California aut Kuo C. Optoelectronics Division, Hewlett-Packard Company, 95131, San Jose, California aut Osentowski T. Optoelectronics Division, Hewlett-Packard Company, 95131, San Jose, California aut Craford M. Optoelectronics Division, Hewlett-Packard Company, 95131, San Jose, California aut Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1133-1139 0361-5235 21:12<1133 1992 21 11664 https://doi.org/10.1007/BF02667606 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02667606 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kish F. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Caracci Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Holonyak N. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Hsieh K. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Baker J. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Maranowski S. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Sugg A. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Dallesasse J. Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, Illinois aut NATIONALLICENCE 700 1- Fletcher R. Optoelectronics Division, Hewlett-Packard Company, 95131, San Jose, California aut NATIONALLICENCE 700 1- Kuo C. Optoelectronics Division, Hewlett-Packard Company, 95131, San Jose, California aut NATIONALLICENCE 700 1- Osentowski T. Optoelectronics Division, Hewlett-Packard Company, 95131, San Jose, California aut NATIONALLICENCE 700 1- Craford M. Optoelectronics Division, Hewlett-Packard Company, 95131, San Jose, California aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1133-1139 0361-5235 21:12<1133 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer