caa a22 4500 469091673 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19921201xx s 000 0 eng 10.1007/BF02667607 doi (NATIONALLICENCE)springer-10.1007/BF02667607 The influence of a hydride preflow on the crystalline quality of InP grown on exactly oriented (100)Si [Elektronische Daten] [A. Lubnow, G. Tang, H. Wehmann, A. Schlachetzki, E. Bugiel, P. Zaumseil] Several microns thick epitaxial InP films have been successfully deposited on exactly oriented (100) Si substrates by metal-organic vapour-phase epitaxy. We have studied the influence of a hydride preflow before buffer growth on the crystalline quality of the InP by measuring the surface roughness, by X-ray diffractometry, TEM and SEM investigations, and by detection of anti-phase-domains. Generally, an AsH3 preflow instead of PH3 improved the crystalline perfection considerably. Furthermore, if AsH3 is introduced only during cool-down between 700 and 900° C after the thermal cleaning step anti-phase-domain free InP is grown. TMS, 1992 InP-on-Si heteroepitaxy nationallicence MOVPE nationallicence hydride preflow nationallicence Lubnow A. Inst. f. Halbleitertechnik, D-W-3300, TU Braunschweig, Braunschweig, Germany aut Tang G. Inst. f. Halbleitertechnik, D-W-3300, TU Braunschweig, Braunschweig, Germany aut Wehmann H. Inst. f. Halbleitertechnik, D-W-3300, TU Braunschweig, Braunschweig, Germany aut Schlachetzki A. Inst. f. Halbleitertechnik, D-W-3300, TU Braunschweig, Braunschweig, Germany aut Bugiel E. Inst. f. Halbleiterphysik, D-O-1200, Frankfurt/Oder, Germany aut Zaumseil P. Inst. f. Halbleiterphysik, D-O-1200, Frankfurt/Oder, Germany aut Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1141-1146 0361-5235 21:12<1141 1992 21 11664 https://doi.org/10.1007/BF02667607 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02667607 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lubnow A. Inst. f. Halbleitertechnik, D-W-3300, TU Braunschweig, Braunschweig, Germany aut NATIONALLICENCE 700 1- Tang G. Inst. f. Halbleitertechnik, D-W-3300, TU Braunschweig, Braunschweig, Germany aut NATIONALLICENCE 700 1- Wehmann H. Inst. f. Halbleitertechnik, D-W-3300, TU Braunschweig, Braunschweig, Germany aut NATIONALLICENCE 700 1- Schlachetzki A. Inst. f. Halbleitertechnik, D-W-3300, TU Braunschweig, Braunschweig, Germany aut NATIONALLICENCE 700 1- Bugiel E. Inst. f. Halbleiterphysik, D-O-1200, Frankfurt/Oder, Germany aut NATIONALLICENCE 700 1- Zaumseil P. Inst. f. Halbleiterphysik, D-O-1200, Frankfurt/Oder, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1141-1146 0361-5235 21:12<1141 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer