caa a22 4500 46909169X CHVBK 20180323133019.0 cr unu---uuuuu 170328e19921201xx s 000 0 eng 10.1007/BF02667603 doi (NATIONALLICENCE)springer-10.1007/BF02667603 Effect of microwave power and reactive gas ratio on the properties of silicon nitride thin films deposited by ECR PECVD [Elektronische Daten] [Y. Jeon, H. Lee, S. Joo] Silicon nitride films were deposited at room temperature on a single crystal silicon substrate by ECR PECVD (electron cyclotron resonance plasma enhanced chemical vapor deposition). Effects of the microwave power and the reactive gas ratio (SiH4/N2) on the film properties, such as, refractive index and breakdown field were investigated. It turned out that the microwave power was closely related to the change in refractive index of the silicon nitride films, while breakdown field did not change much from 6 MV/cm. It was also found that the deposition rate, refractive index, and breakdown field were changed in a certain way with respect to the change in SiH4/N2 ratio, which could be explained in terms of the activated chemical species concentrations in the plasma during deposition. TMS, 1992 Silicon nitride nationallicence ECR PECVD nationallicence M/W power nationallicence reactive gas ratio nationallicence refractive index nationallicence breakdown field nationallicence Jeon Y. Dept. of Metallurgical Eng., Seoul Nat'l Univ., San 56-1 Shillim-dong, 151-742, Kwanak-ku Seoul, Korea aut Lee H. Dept. of Metallurgical Eng., Seoul Nat'l Univ., San 56-1 Shillim-dong, 151-742, Kwanak-ku Seoul, Korea aut Joo S. Dept. of Metallurgical Eng., Seoul Nat'l Univ., San 56-1 Shillim-dong, 151-742, Kwanak-ku Seoul, Korea aut Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1119-1122 0361-5235 21:12<1119 1992 21 11664 https://doi.org/10.1007/BF02667603 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02667603 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jeon Y. Dept. of Metallurgical Eng., Seoul Nat'l Univ., San 56-1 Shillim-dong, 151-742, Kwanak-ku Seoul, Korea aut NATIONALLICENCE 700 1- Lee H. Dept. of Metallurgical Eng., Seoul Nat'l Univ., San 56-1 Shillim-dong, 151-742, Kwanak-ku Seoul, Korea aut NATIONALLICENCE 700 1- Joo S. Dept. of Metallurgical Eng., Seoul Nat'l Univ., San 56-1 Shillim-dong, 151-742, Kwanak-ku Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1119-1122 0361-5235 21:12<1119 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer