<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     caa a22        4500</leader>
  <controlfield tag="001">469091703</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180323133019.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">170328e19921201xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/BF02667599</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/BF02667599</subfield>
  </datafield>
  <datafield tag="100" ind1="1" ind2=" ">
   <subfield code="a">Benton</subfield>
   <subfield code="D">J.</subfield>
   <subfield code="u">AT&amp;T Bell Laboratories, 07974, Murray Hill, New Jersey</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="245" ind1="1" ind2="0">
   <subfield code="a">Application of defect spectroscopy to silicon processing technology</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[J. Benton]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">Established defect spectroscopies and silicon characterization techniques are successfully applied to device manufacturing quality control. Deep level transient spectroscopy, DLTS, and photoconducting decay recombination lifetime measurements routinely monitor epitaxial silicon. Fe and Mo are commonly observed contaminants. Processing tools, such as epitaxial reactors and ion-implantation machines, are regularly monitored for trace metals. Dislocations introduced by specific silicon processing steps are selectively studied with DLTS. Dislocation signatures are present in selectively grown epitaxial silicon as well as in shallow junctions created by BF2 implantation. As a final example, defects introduced by reactive ion etching of silicon are examined by DLTS, photol-uminescence and spreading resistance profiling. The near surface displacement damage region is a source of interstitial defects which undergo recombination enhanced diffusion to depths as great as 1 μm. Measurements previously reserved for research are now being successfully employed as monitors and controls to improve the quality of silicon microelectronic manufacturing.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">TMS, 1992</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">Si processing</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">defect spectroscopy</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">Si manufacturing</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer-Verlag</subfield>
   <subfield code="g">21/12(1992-12-01), 1093-1097</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">21:12&lt;1093</subfield>
   <subfield code="1">1992</subfield>
   <subfield code="2">21</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/BF02667599</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/BF02667599</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">100</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Benton</subfield>
   <subfield code="D">J.</subfield>
   <subfield code="u">AT&amp;T Bell Laboratories, 07974, Murray Hill, New Jersey</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer-Verlag</subfield>
   <subfield code="g">21/12(1992-12-01), 1093-1097</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">21:12&lt;1093</subfield>
   <subfield code="1">1992</subfield>
   <subfield code="2">21</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
