caa a22 4500 469091711 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19921201xx s 000 0 eng 10.1007/BF02667600 doi (NATIONALLICENCE)springer-10.1007/BF02667600 Photoluminescence investigations of graded, totally relaxed GexSi1-x structures [Elektronische Daten] [J. Michel, E. Fitzgerald, Y. Xie, P. Silverman, M. Morse, L. Kimerling] MBE grown, totally relaxed, graded GexSi1-x on Si heterostructures were studied by using photoluminescence spectroscopy at 4.2 K. The existence and linewidth of the near band gap bound exciton recombination confirms the high quality of these layers. Due to the relaxation we find dislocation related D-bands in the near infrared region of the photoluminescence spectra. The dislocation band D4 proved to be an effective tool for measuring residual strain in the heteroepitaxial layer because of its large line-shift in the presence of strain. We found tensile strain of 0.4% at the interface between the SiGe layer and the Si substrate. TMS, 1992 Dislocation related D-bands nationallicence SiGe/Si nationallicence photoluminescence nationallicence Michel J. aut Fitzgerald E. Department of Materials Science and Technology, MIT, 02139, Cambridge, MA aut Xie Y. Department of Materials Science and Technology, MIT, 02139, Cambridge, MA aut Silverman P. aut Morse M. Department of Materials Science and Technology, MIT, 02139, Cambridge, MA aut Kimerling L. Department of Materials Science and Technology, MIT, 02139, Cambridge, MA aut Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1099-1104 0361-5235 21:12<1099 1992 21 11664 https://doi.org/10.1007/BF02667600 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02667600 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Michel J. aut NATIONALLICENCE 700 1- Fitzgerald E. Department of Materials Science and Technology, MIT, 02139, Cambridge, MA aut NATIONALLICENCE 700 1- Xie Y. Department of Materials Science and Technology, MIT, 02139, Cambridge, MA aut NATIONALLICENCE 700 1- Silverman P. aut NATIONALLICENCE 700 1- Morse M. Department of Materials Science and Technology, MIT, 02139, Cambridge, MA aut NATIONALLICENCE 700 1- Kimerling L. Department of Materials Science and Technology, MIT, 02139, Cambridge, MA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/12(1992-12-01), 1099-1104 0361-5235 21:12<1099 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer