caa a22 4500 46909172X CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660460 doi (NATIONALLICENCE)springer-10.1007/BF02660460 Growth of Ga x In1− x As y P1− y using ethyldimethylindium and t -butylphophine [Elektronische Daten] [P. Sharps, J. Posthill, M. Timmons] The growth of GaInAsP lattice matched to GaAs using tertiary-butylphosphine and ethyldimethylindium to replace the more conventional phosphine and trimethylindium is described. The quaternary compound lattice matched to GaAs has received far less attention than related compositions that lattice match InP. Using the new sources, most of the growth problems experienced by previous workers have been avoided. Uniform compositions have been grown reproducibly without evidence of gas-phase, adduct-forming reactions. Bothn- andp-type films have been grown. Heteroepitaxy of high quality GalnAsP layers on Ge has also been achieved, and microstructural results are presented. TMS, 1992 GaInAsP nationallicence ethyldimethylindium nationallicence t -butylphosphine nationallicence germanium substrates nationallicence Sharps P. Research Triangle Institute, 27709-2194, Research Triangle Park, North Carolina aut Posthill J. Research Triangle Institute, 27709-2194, Research Triangle Park, North Carolina aut Timmons M. Research Triangle Institute, 27709-2194, Research Triangle Park, North Carolina aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 317-321 0361-5235 21:3<317 1992 21 11664 https://doi.org/10.1007/BF02660460 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660460 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sharps P. Research Triangle Institute, 27709-2194, Research Triangle Park, North Carolina aut NATIONALLICENCE 700 1- Posthill J. Research Triangle Institute, 27709-2194, Research Triangle Park, North Carolina aut NATIONALLICENCE 700 1- Timmons M. Research Triangle Institute, 27709-2194, Research Triangle Park, North Carolina aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 317-321 0361-5235 21:3<317 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer