caa a22 4500 469091746 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660470 doi (NATIONALLICENCE)springer-10.1007/BF02660470 The growth and characterization of GaN on sapphire and silicon [Elektronische Daten] [Z. Yu, B. Sywe, A. Ahmed, J. Edgar] MOCVD (metalorganic chemical vapor deposition) of GaN on both silicon and sapphire substrates was studied over the temperature range of 370 to 1050° C. The crystallinity and surface morphology of the films varied with the deposition temperatures. By first depositing an AlN buffer layer, the crystallinity of GaN was improved for low temperature depositions, but little improvement in the surface morphology was observed. On sapphire (0001) substrates, epitaxial layers were produced at a deposition temperature as low as 500° C. With silicon substrates, polycrystalline films were produced which were randomly oriented on the (111) plane and highly oriented on the (100) plane. The surfaces of the films were smooth and specular at low deposition temperatures, but degraded at higher temperatures. The energy band gaps of these films are in the vicinity of 3.4 eV, close to where they are expected. Elemental analysis by Auger electron spectroscopy (AES) showed the films to be stoichiometric with low residual impurity concentrations. TMS, 1992 MOCVD nationallicence GaN nationallicence x-ray diffraction nationallicence AES nationallicence Yu Z. Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102, Manhattan, KS aut Sywe B. Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102, Manhattan, KS aut Ahmed A. Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102, Manhattan, KS aut Edgar J. Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102, Manhattan, KS aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 383-387 0361-5235 21:3<383 1992 21 11664 https://doi.org/10.1007/BF02660470 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660470 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yu Z. Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102, Manhattan, KS aut NATIONALLICENCE 700 1- Sywe B. Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102, Manhattan, KS aut NATIONALLICENCE 700 1- Ahmed A. Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102, Manhattan, KS aut NATIONALLICENCE 700 1- Edgar J. Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102, Manhattan, KS aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 383-387 0361-5235 21:3<383 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer