caa a22 4500 469091754 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660458 doi (NATIONALLICENCE)springer-10.1007/BF02660458 OMVPE regrowth of CH3I-vapor-etched GaAs [Elektronische Daten] [C. Wang, C. Krueger, M. Flytzani-Stephanopoulos, R. Brown] In experiments on the interrupted growth of GaAs by organometallic vapor phase epitaxy (OMVPE), we have compared the properties of two types of epilayers: those grown on CH3I-vapor-etched first epilayers and those grown on first epilayers that were either untreated or etched with H2SO4. The OMVPE growth and CH3I etching were performed in two different reactors, and each sample was briefly exposed to air immediately before being placed in the OMVPE reactor for growth of the second epilayer. For CH3I etch temperatures below 500° C, the two types of second epilayers are comparable in surface morphology, as characterized by Nomarski interference microscopy, and in optical quality, as characterized by low-temperature photoluminescence measurements. Electrical characterization by C-V depth profiling shows that electron accumulation at the regrowth interface is increased very little by CH3I etching. Such etching prior to regrowth eliminates most of the electron accumulation resulting from H2SO4 etching of the first epilayer. TMS, 1992 GaAs nationallicence OMVPE nationallicence growth interruption nationallicence regrowth, vapor etching nationallicence CH3I nationallicence Wang C. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut Krueger C. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut Flytzani-Stephanopoulos M. Department of Chemical Engineering, Massachusetts Institute of Technology, 02139, Cambridge, Massachusetts aut Brown R. Department of Chemical Engineering, Massachusetts Institute of Technology, 02139, Cambridge, Massachusetts aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 299-304 0361-5235 21:3<299 1992 21 11664 https://doi.org/10.1007/BF02660458 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660458 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang C. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut NATIONALLICENCE 700 1- Krueger C. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut NATIONALLICENCE 700 1- Flytzani-Stephanopoulos M. Department of Chemical Engineering, Massachusetts Institute of Technology, 02139, Cambridge, Massachusetts aut NATIONALLICENCE 700 1- Brown R. Department of Chemical Engineering, Massachusetts Institute of Technology, 02139, Cambridge, Massachusetts aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 299-304 0361-5235 21:3<299 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer