caa a22 4500 469091762 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660459 doi (NATIONALLICENCE)springer-10.1007/BF02660459 Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE [Elektronische Daten] [T. Kikkawa, H. Tanaka, J. Komeno] We investigate differences in Si doping of GaAs and AIGaAs between group-V sources. Si2H6 and SiH4 doping dependence on growth temperature, V/III ratio, total flow rate, growth rate, and off angle of substrate orientation was examined using tertiarybu-tylarsine (TBAs), monoethylarsine (EtAs), and arsine with a horizontal atmospheric pressure reactor. With either dopant source, Si incorporation for films grown using TBAs or EtAs was always higher than that using arsine. Using silane, dependence of Si incorporation on growth temperature and total gas flow velocity is different between group-V sources. Using disilane, dependence on V/III ratio and total gas flow velocity is different between group-V sources. These results imply that gas phase reactions play an important role. From the kinetic simulation of the decomposition of group-V sources, we verified that the concentrations of AsH3, AsH2, and AsH in vapor near the substrate are quite different among group-V sources. AsH2 is dominant reactant when using TBAs. We propose that H2AsSiH3 (silylarsine) is formed by the reaction between AsH2 radical and SiH4 and silylarsine should contribute Si incorporation reactions, resulting in high Si incorporation efficiency with TBAs and EtAs. We also suggest that AsH3 inhibits Si incorporation. TMS, 1992 MOVPE nationallicence tertiarybutylarsine nationallicence Si doping nationallicence Kikkawa T. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, 243-01, Atsugi, Japan aut Tanaka H. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, 243-01, Atsugi, Japan aut Komeno J. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, 243-01, Atsugi, Japan aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 305-315 0361-5235 21:3<305 1992 21 11664 https://doi.org/10.1007/BF02660459 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660459 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kikkawa T. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, 243-01, Atsugi, Japan aut NATIONALLICENCE 700 1- Tanaka H. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, 243-01, Atsugi, Japan aut NATIONALLICENCE 700 1- Komeno J. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, 243-01, Atsugi, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 305-315 0361-5235 21:3<305 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer