caa a22 4500 469091789 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660450 doi (NATIONALLICENCE)springer-10.1007/BF02660450 Effects of pressure and temperature on epitaxial growth of InP on non-planar substrates using OMVPE [Elektronische Daten] [Jeong-Soo Kim, Ji-Beom Yoo, Dong-Hoon Jang, Dae-Kon Oh, Yong-Tak Lee] The effects of pressure and temperature on the epitaxial growth of InP on the mesastructured substrate have been investigated using OMVPE. At 550° C and 700 Torr, the reverse-mesa profile was observed. As the pressure decreases, the epitaxial growth profile changes from the reverse-mesa shape to the mesa shape. As the growth temperature increases, the growth profile follows the mesa-structured substrate even at high growth pressure. We propose that two major factors contributed to the formation of the reverse-mesa shape at low temperature and high pressure. We can explain the pressure effects on the epitaxial growth profile with these two factors at all growth temperatures ranging from 550 to 650° C. One factor is the growth rate enhancement on the (111)A facet compared to the growth rate on the (001) facet at low growth temperature, the other is the deficiency of constituent at the recess region of the epitaxial layer caused by reduced gas phase diffusivity at high pressure. TMS, 1992 InP nationallicence non-planar growth nationallicence surface diffusion nationallicence Kim Jeong-Soo Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut Yoo Ji-Beom Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut Jang Dong-Hoon Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut Oh Dae-Kon Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut Lee Yong-Tak Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 251-256 0361-5235 21:3<251 1992 21 11664 https://doi.org/10.1007/BF02660450 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660450 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Jeong-Soo Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut NATIONALLICENCE 700 1- Yoo Ji-Beom Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut NATIONALLICENCE 700 1- Jang Dong-Hoon Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut NATIONALLICENCE 700 1- Oh Dae-Kon Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut NATIONALLICENCE 700 1- Lee Yong-Tak Optoelectronic Section, Electronics and Telecommunications Research Institute, Daeduk Danji, P.O. Box 8, Daejeon, Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 251-256 0361-5235 21:3<251 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer