caa a22 4500 469091797 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660455 doi (NATIONALLICENCE)springer-10.1007/BF02660455 Selective growth of GaAs and GaAlAs by Cl-assisted OMVPE at atmospheric pressure [Elektronische Daten] [R. Azoulay, L. Dugrand, A. Izrael, E. Rao, R. Mellet, A. Pougnet] Selective epitaxy of GaAs is generally obtained at low pressure, when the diffusion length of the active species over the dielectric mask is large enough. Another way is to use an organochloride as a precursor, which suppresses the deposition over the dielectric. This method is also used at reduced pressure. In this work, we have obtained selective area epitaxy of GaAs and GaAIAs for a wide range of aluminium composition by adding a controlled flow of AsCl3 during a conventional OMVPE growth at atmospheric pressure. This method is called Cl-assisted OMVPE. When no AsCl3 is used, a finely structured polycrystal is deposited on the mask. When AsCl3 is introduced into the reactor, with otherwise the same growth conditions, complete selectivity was obtained over a 100μm wide Si3N4 mask. We have studied the influence of the growth temperature, the TMG/ AsCl3 and the AsH3/TMG ratios on the growth selectivity. We have also studied the evolution of the limiting planes of the selectively grown ridges with different growth conditions. Finally, on a selectively grown GaAs/GaAlAs double heterostructure, room temperature photoluminescence topography was performed. TMS, 1992 Selective epitaxy nationallicence GaAIAs nationallicence Cl-assisted OMVPE nationallicence Azoulay R. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut Dugrand L. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut Izrael A. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut Rao E. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut Mellet R. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut Pougnet A. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 281-288 0361-5235 21:3<281 1992 21 11664 https://doi.org/10.1007/BF02660455 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660455 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Azoulay R. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut NATIONALLICENCE 700 1- Dugrand L. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut NATIONALLICENCE 700 1- Izrael A. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut NATIONALLICENCE 700 1- Rao E. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut NATIONALLICENCE 700 1- Mellet R. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut NATIONALLICENCE 700 1- Pougnet A. Centre National d'Etudes des Télécommunications Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220, Bagneux, France aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 281-288 0361-5235 21:3<281 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer