caa a22 4500 469091819 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660468 doi (NATIONALLICENCE)springer-10.1007/BF02660468 Experimental investigation of N-MOS inversion layers in the electric quantum limit [Elektronische Daten] [A. Kalnitsky, A. Boothroyd, J. Ellul, N. Tarr, L. Weaver, R. Beerkens] In this paper we report on the experimental determination of inversion electron charge density, silicon surface potential, and effective electron mobility vs oxide electric field, for NMOSFETs with gate oxide thickness Tox = 2.2 nm operating far beyond the limit of applicability of Boltzmann relationships in the inversion layer. We find that such oxides have the same values of destructive breakdown electric field, dielectric constant, and trap density at the silicon-oxide interface as "thick” oxides. TMS, 1992 Si nationallicence NMOSFET nationallicence N-MOS inversion layer nationallicence quantum limit nationallicence Kalnitsky A. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut Boothroyd A. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut Ellul J. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut Tarr N. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut Weaver L. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut Beerkens R. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 367-372 0361-5235 21:3<367 1992 21 11664 https://doi.org/10.1007/BF02660468 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660468 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kalnitsky A. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut NATIONALLICENCE 700 1- Boothroyd A. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut NATIONALLICENCE 700 1- Ellul J. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut NATIONALLICENCE 700 1- Tarr N. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut NATIONALLICENCE 700 1- Weaver L. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut NATIONALLICENCE 700 1- Beerkens R. Northern Telecom Electronics, 185 Corkstown Road, K2H8V4, Nepean, Ontario, Canada aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 367-372 0361-5235 21:3<367 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer