caa a22 4500 469091827 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660464 doi (NATIONALLICENCE)springer-10.1007/BF02660464 Quantitative oxygen measurements in OMVPE Al x Ga1− x As grown by methyl precursors [Elektronische Daten] [T. Kuech, R. Potemski, F. Cardone, G. Scilla] Oxygen has always been considered to be a major contaminant in the organo-metallic vapor phase epitaxy (OMVPE) of Al x Ga1−x As. Oxygen incorporation has been invoked as a contributor to low luminescence efficiency, dopant compensation and degradation of surface morphology among other deleterious effects. This study presents quantitative measurements of oxygen concentration in nominally high purity Al x Ga1−x As. The oxygen concentration was measured as a function of alloy composition, growth temperature, andV/III ratio. Quantitative secondary ion mass spectroscopy (SIMS) measurements were used to determine the oxygen content as well as the carbon concentration in the film. The oxygen concentration increases with decreased growth temperature and V/III ratio while increasing superlinearly with Al content in the epitaxial layer. TMS, 1992 OMVPE nationallicence (AlGa)As nationallicence doping nationallicence oxygen incorporation nationallicence deep levels nationallicence Kuech T. Department of Chemical Engineering, University of Wisconsin, 53706, Madison, WI aut Potemski R. IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut Cardone F. IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut Scilla G. IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 341-346 0361-5235 21:3<341 1992 21 11664 https://doi.org/10.1007/BF02660464 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660464 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kuech T. Department of Chemical Engineering, University of Wisconsin, 53706, Madison, WI aut NATIONALLICENCE 700 1- Potemski R. IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut NATIONALLICENCE 700 1- Cardone F. IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut NATIONALLICENCE 700 1- Scilla G. IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 341-346 0361-5235 21:3<341 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer