caa a22 4500 469091835 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660469 doi (NATIONALLICENCE)springer-10.1007/BF02660469 A study of sputter deposited silicon films [Elektronische Daten] [Y. Xu, R. Huang, G. Rigby] Thermal annealing, oxidation, and impurity doping of room-temperature dc magnetron sputter deposited silicon films are examined. It was found that even with a fine grain structure, the films can be doped to the desired sheet resistances suitable for device applications, although the sheet resistances are higher (2 to 5 times) than those obtained from single crystal silicon. It was also found that pre-diffusion annealing decreases sheet resistance of boron-doped films, but increases the sheet resistance of phosphorus-doped films, this is correlated to the different behavior of boron and phosphorus at the grain boundaries. Oxidation rates are enhanced in both boron-doped and phosphorus doped films. Film thickness reductions of 11 to 31% after high temperature processes was observed. Effects of doping on the shrinkage in film thickness are presented. TMS, 1992 Deposited silicon films nationallicence sputter nationallicence oxidation nationallicence grain boundary nationallicence annealing nationallicence doped silicon films nationallicence film shrinkage nationallicence Xu Y. Department of Electronics, School of Electrical Engineering, The University of New South Wales, 2033, Kensington, NSW, Australia aut Huang R. Department of Electronics, School of Electrical Engineering, The University of New South Wales, 2033, Kensington, NSW, Australia aut Rigby G. Department of Electronics, School of Electrical Engineering, The University of New South Wales, 2033, Kensington, NSW, Australia aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 373-381 0361-5235 21:3<373 1992 21 11664 https://doi.org/10.1007/BF02660469 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660469 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Xu Y. Department of Electronics, School of Electrical Engineering, The University of New South Wales, 2033, Kensington, NSW, Australia aut NATIONALLICENCE 700 1- Huang R. Department of Electronics, School of Electrical Engineering, The University of New South Wales, 2033, Kensington, NSW, Australia aut NATIONALLICENCE 700 1- Rigby G. Department of Electronics, School of Electrical Engineering, The University of New South Wales, 2033, Kensington, NSW, Australia aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 373-381 0361-5235 21:3<373 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer