caa a22 4500 469091843 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660454 doi (NATIONALLICENCE)springer-10.1007/BF02660454 Low pressure and low temperature gallium arsenide homoepitaxy employing in-situ generated arsine [Elektronische Daten] [B. Pihlstrom, T. Sheng, L. Thompson, G. Collins] Removed from the deposition region, an upstream hydrogen microwave plasma etches a surface of solid arsenic located downstream to generate arsenic hydrides. The latter are used with trimethylgallium (TMGa) to achieve low temperature (400-490° C) and low pressure (750 mTorr) homoepitaxial GaAs films. No active or afterglow plasma exists in the growth region. The homoepitaxial growth activation energy of 62 kcal/mole is consistent with the heterogeneous decomposition of TMGa in the absence of arsine. Precursor V-III ratios as low as 0.25 are used to achieve homoepitaxial films, but with high levels of carbon impurities (1019 to mid 1020 cm−3). Carbon incorporation increases at low V-III ratios (0.25 to 0.5) for increasing temperatures with an activation energy of 23 kcal/mole. As the V-III ratios are increased above 1.0, the carbon incorporation activation energy decreases slightly to 15 kcal/mole. TMS, 1992 Low temperature epitaxy nationallicence GaAs nationallicence plasma assisted deposition nationallicence carbon incorporation nationallicence Pihlstrom B. Dept. of Electrical Engineering, Colorado State University, 80523, Fort Collins, CO aut Sheng T. Dept. of Electrical Engineering, Colorado State University, 80523, Fort Collins, CO aut Thompson L. Dept. of Electrical Engineering, Colorado State University, 80523, Fort Collins, CO aut Collins G. Dept. of Electrical Engineering, Colorado State University, 80523, Fort Collins, CO aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 277-279 0361-5235 21:3<277 1992 21 11664 https://doi.org/10.1007/BF02660454 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660454 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Pihlstrom B. Dept. of Electrical Engineering, Colorado State University, 80523, Fort Collins, CO aut NATIONALLICENCE 700 1- Sheng T. Dept. of Electrical Engineering, Colorado State University, 80523, Fort Collins, CO aut NATIONALLICENCE 700 1- Thompson L. Dept. of Electrical Engineering, Colorado State University, 80523, Fort Collins, CO aut NATIONALLICENCE 700 1- Collins G. Dept. of Electrical Engineering, Colorado State University, 80523, Fort Collins, CO aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 277-279 0361-5235 21:3<277 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer