caa a22 4500 469091878 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660461 doi (NATIONALLICENCE)springer-10.1007/BF02660461 Dopant incorporation in GaAs and AlGaAs grown by MOMBE for high speed devices [Elektronische Daten] [C. Abernathy, F. Ren, S. Pearton, J. Song] Continued improvement in GaAs/AlGaAs device technology requires higher doping levels, both to reduce parasitics such as source resistances, and to enhance speed in devices such as the heterostructure bipolar transistor (HBT). In this paper we will discuss doping issues which are critical to high speed performance. In particular, we will focus on doping of GaAs and AIGaAs using carbon as the acceptor and Sn as the donor. Due to the unique growth chemistry of metalorganic molecular beam epitaxy (MOMBE), both of these impurities can be used to achieve high doping levels when introduced from gaseous sources such as trimethylgallium (TMG) or tetraethyltin (TESn). Comparison of SIMS and Hall measurements show that both elements give excellent electrical activation to 1.5 × 1019 cm3 for Sn and 5 × 1020 cm−3 for C. More importantly, we have found that both impurities canbe used to achieve high quality junctions, indicating that little or no diffusion or segregation is occurring during growth. Because of the excellent incorporation behavior of these dopants, we have been able to fabricate a wide range of devices including field effect transistors (FETs), high electron mobility transistors (HEMTs), and Pnp HBTs whose performance equals or exceeds that of similar devices grown by other techniques. In addition to these results, we will briefly discuss the key differences in growth kinetics which allow such abruptness and high doping levels to be achieved more readily in MOMBE than in other growth techniques. TMS, 1992 AlGaAs nationallicence GaAs nationallicence transistors nationallicence MOMBE nationallicence Abernathy C. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Ren F. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Pearton S. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Song J. Massachusetts Institute of Technology, 02139, Cambridge, MA aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 323-327 0361-5235 21:3<323 1992 21 11664 https://doi.org/10.1007/BF02660461 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660461 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Abernathy C. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Ren F. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Pearton S. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Song J. Massachusetts Institute of Technology, 02139, Cambridge, MA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 323-327 0361-5235 21:3<323 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer