caa a22 4500 469091894 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660451 doi (NATIONALLICENCE)springer-10.1007/BF02660451 Localized deposition of GaAs/GaInP heterostructures using LP-MOVPE [Elektronische Daten] [M. Maassen, O. Kayser, R. Westphalen, F. Guimaraes, J. Geurts, J. Finders, P. Balk] GaInP layers were grown selectively by low pressure MOVPE in patterned SiO2 masks on GaAs (100) substrates. The variation of the composition and spontaneous ordering phenomena were analysed by Raman spectroscopy and photoluminescence. In contrast to GaInAs, the composition of GalnP shows only a very weak dependence on the size of the structures. On the other hand, there is a shift of the bandgap energy up to 40 meV with decreasing size of the stripes caused by ordering of the Ga and In atoms. Based on these findings lattice matched GaAs/GalnP multilayers were grown to delineate the growth history of the structures. It was demonstrated that the growth habit of deposition in narrow slits (>1μm) can be used to produce mesa-like stripes with dimensions below 100 nm on top of the mesa. Results of GaAs/GaInP quantum wells selectively grown on top of a mesa are presented. TMS, 1992 Selective area growth nationallicence GaAs/GaInP nationallicence Raman spectroscopy nationallicence quantum wire nationallicence ordering in alloys nationallicence Maassen M. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut Kayser O. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut Westphalen R. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut Guimaraes F. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut Geurts J. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut Finders J. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut Balk P. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 257-264 0361-5235 21:3<257 1992 21 11664 https://doi.org/10.1007/BF02660451 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660451 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Maassen M. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut NATIONALLICENCE 700 1- Kayser O. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut NATIONALLICENCE 700 1- Westphalen R. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut NATIONALLICENCE 700 1- Guimaraes F. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut NATIONALLICENCE 700 1- Geurts J. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut NATIONALLICENCE 700 1- Finders J. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut NATIONALLICENCE 700 1- Balk P. Institute of Semiconductor Electronics I, Technical University Aachen, D-5100, Aachen, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 257-264 0361-5235 21:3<257 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer