caa a22 4500 469091908 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660465 doi (NATIONALLICENCE)springer-10.1007/BF02660465 GaAs/Ge heterojunction grown by metal-organic chemical vapor deposition and its application to high efficiency photovoltaic devices [Elektronische Daten] [J. Chen, M. Ristow, J. Cubbage, J. Werthen] We have studied the heteroepitaxial growth of GaAs on Ge substrates by metal-organic chemical vapor deposition (MOCVD). Different growth conditions and substrate orientations were employed to examine the properties of GaAs grown upon Ge substrates, and in particular the GaAs/Ge interface. The interface properties were found to strongly depend on growth conditions. By small changes in the growth temperature, the GaAs/ Ge interface was altered from active to passive. Only a narrow temperature window (600 to 630° C) for the initial GaAs layer growth gave the passive-Ge junction together with good surface morphology. Accordingly, a high efficiency (19%, AMO) GaAs solar cell was grown by atmospheric pressure MOCVD on a Ge substrate without any junction in the Ge. TMS, 1992 Solar cells nationallicence GaAs nationallicence germanium substrates nationallicence photovoltaic device nationallicence Chen J. Department of Electrical Engineering, University of Maryland, Baltimore Campus, 21228, Baltimore, MD aut Ristow M. VS Corporation (formerly Varian Research Center Solar/MOCVD group), 3075 Hansen Way, 94303, Palo Alto, CA aut Cubbage J. VS Corporation (formerly Varian Research Center Solar/MOCVD group), 3075 Hansen Way, 94303, Palo Alto, CA aut Werthen J. VS Corporation (formerly Varian Research Center Solar/MOCVD group), 3075 Hansen Way, 94303, Palo Alto, CA aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 347-353 0361-5235 21:3<347 1992 21 11664 https://doi.org/10.1007/BF02660465 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660465 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chen J. Department of Electrical Engineering, University of Maryland, Baltimore Campus, 21228, Baltimore, MD aut NATIONALLICENCE 700 1- Ristow M. VS Corporation (formerly Varian Research Center Solar/MOCVD group), 3075 Hansen Way, 94303, Palo Alto, CA aut NATIONALLICENCE 700 1- Cubbage J. VS Corporation (formerly Varian Research Center Solar/MOCVD group), 3075 Hansen Way, 94303, Palo Alto, CA aut NATIONALLICENCE 700 1- Werthen J. VS Corporation (formerly Varian Research Center Solar/MOCVD group), 3075 Hansen Way, 94303, Palo Alto, CA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 347-353 0361-5235 21:3<347 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer