caa a22 4500 469091924 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660467 doi (NATIONALLICENCE)springer-10.1007/BF02660467 Evaluation of Zn{N[Si(CH3)3]2}2 as a p -type dopant in OMVPE growth of ZnSe [Elektronische Daten] [W. Rees, D. Green, T. Anderson, E. Bretschneider, B. Pathangey, C. Park, J. Kim] We have grown nominally undoped ZnSe on GaAs from the precursors H2Se and Et2Zn. Replacement of Et2Zn by Zn[N(TMS)2]2 produced crystalline ZnSe of a lesser quality. Data indicate incorporation of nitrogen into the films when Et2Zn is utilized as the main zinc source with Zn[N(TMS)2]2 being introduced at dopant levels. Characterization techniques employed include NMR, XRD, SIMS, SEM, PL, RGA, GC/MS, and Raman spectroscopy. TMS, 1992 ZnSe nationallicence OMVPE nationallicence Raman spectroscopy nationallicence nitrogen doping nationallicence Rees W. Department of Chemistry and Materials Research and Technology Center, The Florida State University, 32306-3006, Tallahassee, FL aut Green D. Department of Chemistry and Materials Research and Technology Center, The Florida State University, 32306-3006, Tallahassee, FL aut Anderson T. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut Bretschneider E. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut Pathangey B. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut Park C. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut Kim J. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 361-366 0361-5235 21:3<361 1992 21 11664 https://doi.org/10.1007/BF02660467 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660467 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rees W. Department of Chemistry and Materials Research and Technology Center, The Florida State University, 32306-3006, Tallahassee, FL aut NATIONALLICENCE 700 1- Green D. Department of Chemistry and Materials Research and Technology Center, The Florida State University, 32306-3006, Tallahassee, FL aut NATIONALLICENCE 700 1- Anderson T. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut NATIONALLICENCE 700 1- Bretschneider E. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut NATIONALLICENCE 700 1- Pathangey B. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut NATIONALLICENCE 700 1- Park C. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut NATIONALLICENCE 700 1- Kim J. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 361-366 0361-5235 21:3<361 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer