caa a22 4500 469091932 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660456 doi (NATIONALLICENCE)springer-10.1007/BF02660456 Multi-wafer growth of highly uniform InGaP/GaAs by low pressure MOVPE [Elektronische Daten] [M. McKee, T. McGivney, D. Walker, K. Capuder, P. Norris, R. Stall, B. Rose] This paper reports on the large area growth of InGaP/GaAs heterostructures for short wavelength applications (λ ∼ 650 nm) by low pressure MOVPE in a vertical, high speed, rotating disk reactor. Highly uniform films were obtained both on a single 50 mm diam wafer at the center of a 5 inch diam wafer platter and on three, 50 mm diameter GaAs wafers symmetrically placed on a 5 inch diam platter. Characterization was performed by x-ray diffraction, SEM, and room temperature photoluminescence (PL) mapping. For the single wafer growth, PL mapping results show that the total range on wavelength was ±2 nm with a 2 mm edge exclusion. The standard deviation of the peak wavelength,σ w , is 0.7 nm. Thickness uniformity, measured by SEM, is less than 2%. Similar results were obtained for the multi-wafer runs. Each individual wafer has aσ w of 1.1 nm. The wafers have nearly identical PL maps with the variation of the average wavelength from the three wafers within ±0.1 nm. TMS, 1992 InGaP nationallicence growth uniformity nationallicence PL mapping nationallicence visible lasers nationallicence McKee M. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J. aut McGivney T. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J. aut Walker D. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J. aut Capuder K. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J. aut Norris P. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J. aut Stall R. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J. aut Rose B. C.N.E.T., 196 Rue Henri Ravera, F-92220, Bagneux, France aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 289-292 0361-5235 21:3<289 1992 21 11664 https://doi.org/10.1007/BF02660456 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660456 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- McKee M. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J aut NATIONALLICENCE 700 1- McGivney T. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J aut NATIONALLICENCE 700 1- Walker D. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J aut NATIONALLICENCE 700 1- Capuder K. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J aut NATIONALLICENCE 700 1- Norris P. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J aut NATIONALLICENCE 700 1- Stall R. EMCORE Corporation, 35 Elizabeth Ave., 08873, Somerset, N.J aut NATIONALLICENCE 700 1- Rose B. C.N.E.T., 196 Rue Henri Ravera, F-92220, Bagneux, France aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 289-292 0361-5235 21:3<289 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer