caa a22 4500 469091940 CHVBK 20180323133019.0 cr unu---uuuuu 170328e19920301xx s 000 0 eng 10.1007/BF02660466 doi (NATIONALLICENCE)springer-10.1007/BF02660466 Growth mechanism of AlGaAs on terraced substrates by low pressure MOVPE [Elektronische Daten] [Yoshihiro Ueta, Naoki Wada, Shiro Sakai, Yoshihiro Shintani] AlGaAs layers were grown on recessed GaAs substrates by MOVPE at 5 and 100 Torr. The two mechanisms, the gas phase diffusion through the stagnant layer and the surface migration of the growing species, are responsible for the surface step height after the growth. Since the mean free path in the gas phase at 5 Torr (≈20μm) is longer than the recess height (≈1μm), only the surface migration determines the growth at 5 Torr, while both mechanisms contribute to the growth at 100 Torr. The surface diffusion equation is solved to find out the relation between the growth conditions and the surface step height after the growth. It was found that the surface migration length on the (111)A surface is much longer than that on the (100) plane. The optical waveguide is fabricated by growing a double-heterostructure on the recessed substrate, and light confinement in the channel is verified. TMS, 1992 MOCVD nationallicence growth mechanism nationallicence terraced substrate nationallicence optical waveguide nationallicence Ueta Yoshihiro Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, 770, Tokushima, Japan aut Wada Naoki Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, 770, Tokushima, Japan aut Sakai Shiro Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, 770, Tokushima, Japan aut Shintani Yoshihiro Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, 770, Tokushima, Japan aut Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 355-359 0361-5235 21:3<355 1992 21 11664 https://doi.org/10.1007/BF02660466 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660466 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ueta Yoshihiro Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, 770, Tokushima, Japan aut NATIONALLICENCE 700 1- Wada Naoki Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, 770, Tokushima, Japan aut NATIONALLICENCE 700 1- Sakai Shiro Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, 770, Tokushima, Japan aut NATIONALLICENCE 700 1- Shintani Yoshihiro Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, 770, Tokushima, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/3(1992-03-01), 355-359 0361-5235 21:3<355 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer