caa a22 4500 469091975 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19921001xx s 000 0 eng 10.1007/BF02684208 doi (NATIONALLICENCE)springer-10.1007/BF02684208 Stress in thermally annealed parylene films [Elektronische Daten] [S. Dabral, J. Van Etten, X. Zhang, C. Apblett, G. Yang, P. Ficalora, J. McDonald] Stress is a problem for thin film Multichip Modules (MCM) fabrication and reliability. Stress can cause adhesion failure, wire cracking and fracture of the polymer. Parylene can be deposited in a low compressive stress state, and here we explore its temperature-stress behavior. The stress generated by thermal coefficient of expansion (TCE) mis-match between thick parylene-n (PA-n) films (4-7 μm)and Si substrates has been studied as a function temperature. Measurements of stress were made on as-deposited films; after thermal annealing and also in-situ. The as-deposited films are under compressive stress of 20 MPa. As the films are annealed, the stress decreases and then becomes tensile, peaking at about 53 MPa. It was observed that stress was reduced in PA-n films during the crystal phase transformations at around 200 and 270°C. The stress has been compared to reported data from other sources and found to agree. Stress in PA-c (chlorinated), and co-polymerized PA-n ande (ethyl) films, and a fluorinated parylene (PA-f) are also evaluated. The effective glass transition temperatures and the linear coefficient of expansion have also been estimated. TMS, 1992 Parylene nationallicence thin films nationallicence stress nationallicence Dabral S. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut Van Etten J. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut Zhang X. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut Apblett C. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut Yang G. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut Ficalora P. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut McDonald J. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 989-994 0361-5235 21:10<989 1992 21 11664 https://doi.org/10.1007/BF02684208 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02684208 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dabral S. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut NATIONALLICENCE 700 1- Van Etten J. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut NATIONALLICENCE 700 1- Zhang X. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut NATIONALLICENCE 700 1- Apblett C. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut NATIONALLICENCE 700 1- Yang G. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut NATIONALLICENCE 700 1- Ficalora P. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut NATIONALLICENCE 700 1- McDonald J. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 12180, Troy, NY aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 989-994 0361-5235 21:10<989 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer