caa a22 4500 469091991 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19921001xx s 000 0 eng 10.1007/BF02684209 doi (NATIONALLICENCE)springer-10.1007/BF02684209 Effects of illumination during anodization of porous silicon [Elektronische Daten] [C. Tsai, K. Li, J. Campbell, B. Hance, M. Arendt, J. White, S. Yau, A. Bard] The effects of illumination during anodic etching of porous Si have been studied. For a fixed current density and anodization time, it has been observed that below a critical irradiance level, increasing the radiant flux density during anodization results in higher photoluminescence and a blue shift of the photoluminescence spectra. For irradiance above the critical value, the photoluminescence intensity decreases. Transmission Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy have been employed to investigate the effects of illumination on the characteristics of porous Si. TMS, 1992 Porous Si nationallicence photoluminescence nationallicence illumination effect nationallicence Tsai C. Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas aut Li K. Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas aut Campbell J. Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas aut Hance B. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut Arendt M. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut White J. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut Yau S. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut Bard A. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 995-1000 0361-5235 21:10<995 1992 21 11664 https://doi.org/10.1007/BF02684209 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02684209 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tsai C. Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas aut NATIONALLICENCE 700 1- Li K. Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas aut NATIONALLICENCE 700 1- Campbell J. Microelectronics Research Center Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas aut NATIONALLICENCE 700 1- Hance B. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut NATIONALLICENCE 700 1- Arendt M. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut NATIONALLICENCE 700 1- White J. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut NATIONALLICENCE 700 1- Yau S. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut NATIONALLICENCE 700 1- Bard A. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 995-1000 0361-5235 21:10<995 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer