caa a22 4500 469092009 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19921001xx s 000 0 eng 10.1007/BF02684206 doi (NATIONALLICENCE)springer-10.1007/BF02684206 Luminescence from AI0.28Ga0.72AS0.62P0.38 layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy [Elektronische Daten] [Meng-Chyi Wu, Chyuan-Wei Chen] High quality Al0.28Ga0.72As0.62P0.38 layers were grown on GaAso.6iPo.39 epitaxial sub-strates by liquid-phase epitaxy using a supercooling technique. The electrical properties of the AlGaAsP layers were determined by capacitance-voltage measurements at 300K. The undoped layers always give n-type conduction with a background concentration of 1 × 1016 cm−3. The 9-K photoluminescence spectra show three distinctive peaks and their relative intensities change with the excitation power density. The temperature dependence of photoluminescence from the undoped AlGaAsP layers shows that there is a new peak emerging above 30K. The four major emission peaks have been identified, involving intrinsic recombination, donor-to-valence-band transitions, conduction-band-to-acceptor transitions, and donor-acceptor pair transitions. The binding energies of the residual donors and acceptors are 13.7 and 36 meV, respectively, nevertheless these impurites are not completely identified. TMS, 1992 AlGaAsP nationallicence photoluminescence nationallicence liquid-phase epitaxy nationallicence Wu Meng-Chyi Research Institute of Electrical Engineering, National Tsing Hua University, 300, Hsinchu, Taiwan, Republic of China aut Chen Chyuan-Wei Research Institute of Electrical Engineering, National Tsing Hua University, 300, Hsinchu, Taiwan, Republic of China aut Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 977-981 0361-5235 21:10<977 1992 21 11664 https://doi.org/10.1007/BF02684206 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02684206 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wu Meng-Chyi Research Institute of Electrical Engineering, National Tsing Hua University, 300, Hsinchu, Taiwan, Republic of China aut NATIONALLICENCE 700 1- Chen Chyuan-Wei Research Institute of Electrical Engineering, National Tsing Hua University, 300, Hsinchu, Taiwan, Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 977-981 0361-5235 21:10<977 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer