caa a22 4500 469092017 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19921001xx s 000 0 eng 10.1007/BF02684205 doi (NATIONALLICENCE)springer-10.1007/BF02684205 Sol-Gel processing of Nb-doped Pb(Zr, Ti)O3 thin films for ferroelectric memory applications [Elektronische Daten] [Daniel Ryder, Narayanan Raman] The ferroelectric properties of Nb-doped PZT thin films prepared by a sol-gel method were evaluated relative to memory device application requirements. Within the range of 0 to 4 mol %, Nb-doping of PZT compositions near the morphotropic phase boundary region (i.e. PZT 53/47) enhanced overall ferroelectric properties by reducing the te-tragonal distortion of the unit cell. A 4 mol % Nb-doped PZT 53/47 thin film (0.26 μm) had a coercivity of 8 V/ μm, a remanence ratio of 0.54, a switchable polarization of 45 μC/cm2, and a specific resistivity of 3 x 109 Ω-cm. Nb-doping levels in excess of 5 mol had a detrimental effect on the resulting thin film ferroelectric properties. X-ray diffraction (XRD) analysis of highly doped films showed development of a significant PbO phase accompanied by diffraction line broadening of the perovskite phase. As such, it was postulated that the creation of excessive lead vacancies in the PNZT lattice resulted in PbO accumulation at the grain boundaries which impeded grain growth, and hence, adversely affected ferroelectric switching performance. The fatigue performance of the sol-gel derived thin film capacitor system was a function of switching voltage. At switching fields sufficient to saturate the polarization, the endurance of the thin film capacitor was greater than 109 cycles. Cycling with lower fields reduced endurance values, but in all cases, the switchable polarization decreased linearly with the logarithm of cycles. Nb-doping did not have a significant effect on the fatigue performance. TMS, 1992 Sol-gel processing nationallicence Nb-doped Pb(Zr, Ti)O3 nationallicence ferroelectric thin films nationallicence Ryder Daniel Laboratory for Materials & Interfaces, Tufts University, 02155, Medford, MA aut Raman Narayanan Laboratory for Materials & Interfaces, Tufts University, 02155, Medford, MA aut Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 971-975 0361-5235 21:10<971 1992 21 11664 https://doi.org/10.1007/BF02684205 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02684205 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ryder Daniel Laboratory for Materials & Interfaces, Tufts University, 02155, Medford, MA aut NATIONALLICENCE 700 1- Raman Narayanan Laboratory for Materials & Interfaces, Tufts University, 02155, Medford, MA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 971-975 0361-5235 21:10<971 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer