caa a22 4500 469092025 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19921001xx s 000 0 eng 10.1007/BF02684204 doi (NATIONALLICENCE)springer-10.1007/BF02684204 Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy [Elektronische Daten] [J. Gong, S. Nakamura, M. Leonard, S. Bedair, N. El-Masry] AIGaP and GaP films were deposited on the (100) Si substrates by atomic layer epitaxy (ALE) in the temperature range between 450 and 600°C. Under optimum growth conditions, the growth of GaP and AIGaP was observed to proceed in a two-dimensional (2-D) fashion in the initial growth stages. These ALE-grown films have better surface morphology when compared with the corresponding MOCVD-grown films. With an AIGaP buffer layer grown on Si, the subsequent growth of GaAs on the AlGaP-coated Si substrates tends to proceed as 2-D growth. This avoids island growth and the two-step growth process currently used. TMS, 1992 ALE nationallicence MOCVD nationallicence AIGaP and GaP on Si heteroepitaxy nationallicence TEM nationallicence Gong J. Department of Materials Science and Engineering, North Carolina State University, 27695-7916, Raleigh, N.C. aut Nakamura S. Semiconductor Division, Sumitomo Metal Inc., Japan aut Leonard M. Department of Materials Science and Engineering, North Carolina State University, 27695-7916, Raleigh, N.C. aut Bedair S. Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, N.C. aut El-Masry N. Department of Materials Science and Engineering, North Carolina State University, 27695-7916, Raleigh, N.C. aut Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 965-970 0361-5235 21:10<965 1992 21 11664 https://doi.org/10.1007/BF02684204 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02684204 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gong J. Department of Materials Science and Engineering, North Carolina State University, 27695-7916, Raleigh, N.C aut NATIONALLICENCE 700 1- Nakamura S. Semiconductor Division, Sumitomo Metal Inc., Japan aut NATIONALLICENCE 700 1- Leonard M. Department of Materials Science and Engineering, North Carolina State University, 27695-7916, Raleigh, N.C aut NATIONALLICENCE 700 1- Bedair S. Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, N.C aut NATIONALLICENCE 700 1- El-Masry N. Department of Materials Science and Engineering, North Carolina State University, 27695-7916, Raleigh, N.C aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 965-970 0361-5235 21:10<965 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer