caa a22 4500 469092033 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19921001xx s 000 0 eng 10.1007/BF02684200 doi (NATIONALLICENCE)springer-10.1007/BF02684200 Electrical properties of oxygen ion-implanted InP [Elektronische Daten] [L. He, W. Anderson] The effect of oxygen ion implantation on defect levels and the electrical properties of undoped InP (n-type) and Sn-doped InP have been investigated as a function of postimplant annealing at temperatures of 300 and 400° C. The surface interruption by ion bombardment was studied by a non-invasive optical technique—photoreflectance (PR) spectroscopy. Current-voltage (I-V) characterization and deep level transient spectros-copy (DLTS) were carried out. The free carrier compensation mechanism was studied from the microstructure behavior of defect levels associated with O+ implantation. Free carriers may be trapped in both residual and ion-bombardment-induced defect sites. Rapid thermal annealing (RTA) performed at different temperatures showed that if residual traps were removed by annealing, the compensation efficiency will be enhanced. Post-implant RTA treatment showed that at the higher temperature (400°C), trapped carriers may be re-excited, resulting in a weakened compensation. Comparing the results of undoped and Sn-doped InP indicated that the carrier compensation effect is substrate doping dependent. TMS, 1992 Oxygen implantation nationallicence defect levels nationallicence He L. Department of Electrical and Computer Engineering, Center for Electronic and Electro-optic Materials, 217 Bonner Hall State University of New York at Buffalo, 14260, Buffalo, NY aut Anderson W. Department of Electrical and Computer Engineering, Center for Electronic and Electro-optic Materials, 217 Bonner Hall State University of New York at Buffalo, 14260, Buffalo, NY aut Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 937-945 0361-5235 21:10<937 1992 21 11664 https://doi.org/10.1007/BF02684200 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02684200 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- He L. Department of Electrical and Computer Engineering, Center for Electronic and Electro-optic Materials, 217 Bonner Hall State University of New York at Buffalo, 14260, Buffalo, NY aut NATIONALLICENCE 700 1- Anderson W. Department of Electrical and Computer Engineering, Center for Electronic and Electro-optic Materials, 217 Bonner Hall State University of New York at Buffalo, 14260, Buffalo, NY aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 937-945 0361-5235 21:10<937 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer